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L1450-35K42N

Description
4mm, 1 ELEMENT, INFRARED LED, 1450nm, ROHS COMPLIANT, HERMETIC SEALED, TO-46, 2 PIN
CategoryLED optoelectronic/LED    photoelectric   
File Size96KB,3 Pages
ManufacturerEpitex Inc
Websitehttp://www.epitex.com
Environmental Compliance
Download Datasheet Parametric View All

L1450-35K42N Overview

4mm, 1 ELEMENT, INFRARED LED, 1450nm, ROHS COMPLIANT, HERMETIC SEALED, TO-46, 2 PIN

L1450-35K42N Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEpitex Inc
package instructionROHS COMPLIANT, HERMETIC SEALED, TO-46, 2 PIN
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum forward current0.1 A
Number of functions1
Maximum operating temperature80 °C
Minimum operating temperature-30 °C
Optoelectronic device typesINFRARED LED
Nominal output power1.3 mW
peak wavelength1450 nm
shapeROUND
size4 mm
epitex
Opto-Device & Custom LED
5
STEM TYPE LED LAMP L1450-30K42N
Lead ( Pb ) Free Product – RoHS Compliant
L1450-35K42N

Stem type LED with high output power
L1450-35K42N is
an InGaAs/InP
LED mounted on TO-46 stem and hermetically sealed with
spherical glass ball lens being designed for high beam uses.
On forward bias it emits a spectral band of radiation, which peaks at 1450nm.
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip dimension
(2) Peak Wavelength
4) Package
(1) Type
(2) Lens
(3) Cap
Outer
dimension (Unit: mm)
LED Lamp
L1450-35K42N
InGaAsP
350um*350um
1450nm typ.
TO-46 stem
Unspherical Glass Lens
Gold plated
φ5.4±0.2
Glass Lens
Plated with Au
φ4.7±0.1
φ4.0±0.1
4.85±0.2
14.0±1.0
① Cathode
② Anode
2.5
1
1.0 .0
Absolute
Maximum Ratings [Ta=25°C]
Item
Symbol
Power Dissipation
P
D
Forward Current
I
F
Pulse Forward Current
I
FP
Reverse Voltage
V
R
Thermal Resistance
R
thja
Junction Temperature
T
j
Operating Temperature
T
OPR
Storage Temperature
T
STG
Soldering Temperature
T
SOL
Maximum Rated Value
130
100
500
5
330
100
-30 ~ +80
-40 ~ +100
265
3.8±0.2
2-φ0.45
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 265°C.
Electro-Optical
Characteristics [Ta=25°C typ.]
Item
Symbol
Condition
Forward Voltage
V
F
I
F
=50mA
Radiated Power
P
O
I
F
=50mA
Radiant Intensity
I
E
I
F
=50mA
Peak Wavelength
P
I
F
=50mA
Half Width

I
F
=50mA
Viewing Half Angle


I
F
=50mA
Rise Time
tr
I
F
=50mA
Fall Time
tf
I
F
=50mA
Minimum
1400
Typical
1.0
1.3
4.0
1450
110
±8.7
10
10
Maximum
1500
Unit
V
mW
mW/sr
nm
nm
deg.
ns
ns
‡Radiated Power is measured by G8370-85.
‡Radiated Power is measured by Ando Optical Multi Meter AQ2140 & AQ2742.
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/

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