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1N485

Description
Rectifier Diode, 1 Element, 0.1A, 180V V(RRM), Silicon, DO-7, DO-7, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size107KB,2 Pages
ManufacturerSemitronics Corp.
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1N485 Overview

Rectifier Diode, 1 Element, 0.1A, 180V V(RRM), Silicon, DO-7, DO-7, 2 PIN

1N485 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSemitronics Corp.
Parts packaging codeDO-7
package instructionDO-7, 2 PIN
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-7
JESD-30 codeO-XALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current1 A
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Maximum output current0.1 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage180 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
IPN= 4869246 0000307 67T

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Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction DO-7, 2 PIN , 2220 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2
Reach Compliance Code unknown compliant unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 200 °C 125 °C 200 °C 200 °C 200 °C 200 °C 200 °C
Package form LONG FORM SMT LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
surface mount NO YES NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Is it lead-free? Contains lead - Contains lead Contains lead Contains lead Contains lead Contains lead
Maker Semitronics Corp. - Semitronics Corp. Semitronics Corp. Semitronics Corp. Semitronics Corp. Semitronics Corp.
Parts packaging code DO-7 - DO-7 DO-7 DO-7 DO-7 DO-7
Contacts 2 - 2 2 2 2 2
Shell connection ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON - SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V - 1 V 1 V 1 V 1.1 V 1.1 V
JEDEC-95 code DO-7 - DO-7 DO-7 DO-7 DO-7 DO-7
JESD-30 code O-XALF-W2 - O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2
Maximum non-repetitive peak forward current 1 A - 0.7 A 0.5 A 0.4 A 1 A 1 A
Number of components 1 - 1 1 1 1 1
Maximum output current 0.1 A - 0.015 A 0.005 A 0.001 A 0.1 A 0.1 A
Package body material UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape ROUND - ROUND ROUND ROUND ROUND ROUND
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.25 W - 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 180 V - 35 V 80 V 230 V 36 V 70 V
Terminal form WIRE - WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL - AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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