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MUR1610CT

Description
8 A, 100 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size590KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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MUR1610CT Overview

8 A, 100 V, SILICON, RECTIFIER DIODE

Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
Features
Glass passivated chip
Superfast switching time for hight efficiency
Low reverse leakage current
High surge capacity
MUR1605CT
THRU
MUR1660CT
16 Amp Super Fast
Glass Passivated
Rectifier
50 to 600 Volts
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
300V
400V
600V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
300V
400V
600V
TO-220AB
B
C
K
PIN
1
2
3
Catalog
Number
L
M
D
A
E
MUR1605CT
MUR1610CT
MUR1620CT
MUR1630CT
MUR1640CT
MUR1660CT
MUR1605CT
MUR1610CT
MUR1620CT
MUR1630CT
MUR1640CT
MUR1660CT
35V
70V
140V
210V
280V
420V
F
G
I
J
N
H H
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
1605CT-1620CT
1630CT-1640CT
1660CT
I
F(AV)
I
FSM
16 A
90 A
T
C
= 90°C
8.3ms, half sine
PIN 1
PIN 3

MM

14.22
9.65
2.54
5.84
9.65
------
12.70
2.29
0.51
0.30
3.53
3.56
1.14
2.03


15.88
10.67
3.43
6.86
10.67
6.35
14.73
2.79
1.14
0.64
4.09
4.83
1.40
2.92
 
PIN 2
CASE
V
F
.975V
1.30V
1.50V
10uA
500uA
I
FM
= 8 A
T
J
= 25°C


A
B
C
D
E
F
G
H
I
J
K
L
M
N
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
1605CT-1620
1640CT-1660
Typical Junction
Capacitance
I
R
T
J
= 25°C
T
J
= 125°C
T
rr
35ns
50ns
62pF
I
F
=0.5A, I
r
=1.0A,
I
rr
=0.25A
Measured at
1.0MHz, V
R
=4.0V
INCHES



.560
.625
.380
.420
.100
.135
.230
.270
.380
.420
------
.250
.500
.580
.090
.110
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
.080
.115
C
J
*Pulse Test: Pulse Width 300µsec, Duty Cycle 2%
www.cnelectr.com

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