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AS7C33256FT36A-10TQIN

Description
3.3V 256K x 32/36 Flow-through synchronous SRAM
Categorystorage    storage   
File Size508KB,19 Pages
ManufacturerALSC [Alliance Semiconductor Corporation]
Environmental Compliance
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AS7C33256FT36A-10TQIN Overview

3.3V 256K x 32/36 Flow-through synchronous SRAM

AS7C33256FT36A-10TQIN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerALSC [Alliance Semiconductor Corporation]
Parts packaging codeQFP
package instructionLQFP, QFP100,.63X.87
Contacts100
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time10 ns
Other featuresFLOW-THROUGH ARCHITECTURE
Maximum clock frequency (fCLK)83 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee3
length20 mm
memory density9437184 bi
Memory IC TypeSTANDARD SRAM
memory width36
Number of functions1
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)245
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.03 A
Minimum standby current3.14 V
Maximum slew rate0.3 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
width14 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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