UNISONIC TECHNOLOGIES CO., LTD
10N60K-MT
10A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The
UTC 10N60K-MT
is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
1
TO-220
Power MOSFET
1
TO-220F
1
TO-220F1
1
TO-220F2
FEATURES
1
TO-220F3
1
TO-262
* R
DS(ON)
< 0.75Ω @ V
GS
=10V, I
D
= 5.0A
* Low gate charge ( typical 33 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
1
TO-263
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
10N60KL-TA3-T
10N60KG-TA3-T
TO-220
10N60KL-TF3-T
10N60KG-TF3-T
TO-220F
10N60KL-TF1-T
10N60KG-TF1-T
TO-220F1
10N60KL-TF2-T
10N60KG-TF2-T
TO-220F2
10N60KL-TF3T-T
10N60KG-TF3T-T
TO-220F3
10N60KL-T2Q-T
10N60KG-T2Q-T
TO-262
10N60KL-TQ2-T
10N60KG-TQ2-T
TO-263
10N60KL-TQ2-R
10N60KG-TQ2-R
TO-263
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 6
QW-R205-022.J
10N60K-MT
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R205-022.J
10N60K-MT
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
± 30
V
Avalanche Current (Note 2)
I
AR
10
A
Continuous
I
D
10
A
Drain Current
38
A
Pulsed (Note 2)
I
DM
Single Pulsed (Note 3)
E
AS
200
mJ
Avalanche Energy
12
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262
156
W
TO-263
P
D
Power Dissipation
TO-220F/TO-220F1
52
W
TO-220F2/TO-220F3
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 4mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25
Ω
Starting T
J
= 25°C
4. I
SD
≤
9.5A, di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
2.4
°C/W
RATING
62.5
0.8
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
TO-220/TO-262
TO-263
Junction to Case
TO-220F/TO-220F1
TO-220F2/TO-220F3
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R205-022.J
10N60K-MT
ELECTRICAL CHARACTERISTICS
(T
C
= 25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
600
V
1
µA
100 nA
-100 nA
V/°C
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
10
38
1.4
420
4.2
A
A
V
ns
µC
V
GS
=0V, I
D
= 250μA
V
DS
=600V, V
GS
=0V
Forward
V
GS
=30V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
I
D
=250 µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
V
DS
=50V, I
D
=1.3A, V
GS
=10V
Gate-Source Charge
Q
GS
I
G
=100μA (Note1, 2)
Gate-Drain Charge
Q
GD
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω,
V
GS
=0V (Note1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=10A
Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=10A,
dI
F
/dt=100A/µs (Note1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test : Pulse width
≤300µs,
Duty cycle
≤2%
2. Essentially independent of operating temperature
0.7
2.0
4.0
0.63 0.75
1570
166
18
33
9
8.5
67
84
205
95
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R205-022.J
10N60K-MT
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R205-022.J
京公网安备 11010802033920号
EEWORLD
