1SS226(T5RTYU,F) datasheet, PDF

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1SS226(T5RTYU,F): DescriptionRectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon; CategoryDiscrete semiconductor diode; File Size172KB，5 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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1SS226(T5RTYU,F) Overview

Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon

1SS226(T5RTYU,F) Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3
Number of components	2
Number of terminals	3
Maximum operating temperature	125 °C
Maximum output current	0.1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.15 W
Maximum repetitive peak reverse voltage	85 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL

1SS226(T5RTYU,F) Related Products

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Description	Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon	Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon	CAPACITOR, METALLIZED FILM, POLYESTER, 400V, 0.15uF, THROUGH HOLE MOUNT, RADIAL LEADED	CAPACITOR, METALLIZED FILM, POLYESTER, 630V, 0.033uF, THROUGH HOLE MOUNT, RADIAL LEADED	CAPACITOR, METALLIZED FILM, POLYESTER, 630V, 0.033uF, THROUGH HOLE MOUNT, RADIAL LEADED	CAPACITOR, METALLIZED FILM, POLYESTER, 630V, 0.033uF, THROUGH HOLE MOUNT, RADIAL LEADED	Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon	Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon	Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon	Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon
package instruction	R-PDSO-G3	R-PDSO-G3	,	,	,	,	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Reach Compliance Code	unknown	unknow	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Number of terminals	3	3	2	2	2	2	3	3	3	3
Maximum operating temperature	125 °C	125 °C	85 °C	85 °C	85 °C	85 °C	125 °C	125 °C	125 °C	125 °C
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR PACKAGE	RECTANGULAR PACKAGE	RECTANGULAR PACKAGE	RECTANGULAR PACKAGE	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
surface mount	YES	YES	NO	NO	NO	NO	YES	YES	YES	YES
Maker	Toshiba Semiconductor	Toshiba Semiconductor	-	-	-	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	-	-	-	-	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON	SILICON	-	-	-	-	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	-	-	-	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3	R-PDSO-G3	-	-	-	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	2	2	-	-	-	-	2	2	2	2
Maximum output current	0.1 A	0.1 A	-	-	-	-	0.1 A	0.1 A	0.1 A	0.1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package form	SMALL OUTLINE	SMALL OUTLINE	-	-	-	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.15 W	0.15 W	-	-	-	-	0.15 W	0.15 W	0.15 W	0.15 W
Maximum repetitive peak reverse voltage	85 V	85 V	-	-	-	-	85 V	85 V	85 V	85 V
Maximum reverse recovery time	0.004 µs	0.004 µs	-	-	-	-	0.004 µs	0.004 µs	0.004 µs	0.004 µs
Terminal form	GULL WING	GULL WING	-	-	-	-	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	-	-	-	-	DUAL	DUAL	DUAL	DUAL

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