K7A163630B-QI25T datasheet, PDF

K7A163630B-QI25T: DescriptionStandard SRAM, 512KX36, 2.6ns, CMOS, PQFP100; Categorystorage storage; File Size414KB，19 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K7A163630B-QI25T Overview

Standard SRAM, 512KX36, 2.6ns, CMOS, PQFP100

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	QFP, QFP100,.63X.87
Reach Compliance Code	unknown
Maximum access time	2.6 ns
Maximum clock frequency (fCLK)	250 MHz
I/O type	COMMON
JESD-30 code	R-PQFP-G100
memory density	18874368 bit
Memory IC Type	STANDARD SRAM
memory width	36
Humidity sensitivity level	1
Number of terminals	100
word count	524288 words
character code	512000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	2.5,3.3 V
Certification status	Not Qualified
Maximum standby current	0.13 A
Minimum standby current	2.38 V
Maximum slew rate	0.36 mA
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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