O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212) 227-6005
TELEX: 13-8720
1N3062 • 1N3063 • 1N3064 • 1N4305 • 1N4454
ULTRA FAST LOW CAPACITANCE
DIFFUSED SILICON PLANAR* DIODES
•
•
•
C . . . 2.0 pF @ V
R
-0, f - 1.0MHz
t
rr
... 4.0 ns
&
If • 10 mA. R
r
» 10 mA, V
r
- 1.0 V
BV...75 V (MIN)
Maximum Temperatures
Storage Temperature
Operating Temperature
Maximum Power Dissipation
Total Dissipation
Linear Derating Factor
Maximum Voltages and Currents
WIV
Working Inverse Voltage
IQ
Average Rectified Current
If
Forward Current Steady State dc
if
Recurrent Peak Forward Current
if (surge) Peak Forward Surge Current
Pulse Width - 1.0 s
Pulse Width - 1.0 MS
1N3062
ABSOLUTE MAXIMUM RATINGS (T
A
- 25°C) (Note 1)
1N3063
-65° C to +.200° C
-65°C to+175°C
1N3064
1N4454
~65°C to-H75°C
-65° C to+150°C
1N4305
-65° C to+200° C
250 mW
250 mW
500 mW
1.67mW/°C 2.0mW/°C 4.0 mW/°C
500 mW
2.85 mW/°C
75V
50 V
75 mA
115 mA
50 V
75 mA
115 mA
40 V
200 mA
400 mA
225 mA
500mA
2.0 A
225 mA
500mA
2.0 A
600 mA
1.0 A
4.0 A
ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)
SYMBOL
CHARACTERISTIC
Forward Voltage
MIN.
MAX.
1.0
UNITS
V
V
V
V
V
V
MA
MA
V
TEST CONDITIONS
IF -20mA
I
F
= 10mA
VF
1N3062
1N3063 |
0.700
1N4305 j
0.610
0.550
0.505
IN 3064 1
1N4454 j
0.850
0.710
0.650
0.575
1.0
0.1
100
IF - 2.0mA
IF - 1.0mA
IF -250 MA
IF = 10mA
V
R
= 50 V
IR
|R
BV
«rr
Reverse Current
Breakdown Voltage
Reverse Recovery Time
75
v
R
-SOV,TA = iso°c
IR-S.OMA
l
f
- 10 mA, V
r
= 6,0 V, R
L
- 100 «
C
Capacitance
1N4305
1N3062
1N3063
1N3064
1N4454
1N4305 ,
1N3062
1N3063
1N3064
1N4454
1N430S
45
2.0
ns
4.0
ns
If = l
r
= 1 0 m A , R L = 100 n.
V
r
= 1.0V
VR =0, f = 1.0 MHz
1.0
PF
2.0
PF
VF- =0, f = 1.0MHz
RE
AV
F
/-C
^
Rectification Efficiency
Forward Voltage Temperature
Coefficient
%
1.8
f = 1.0MHz
mV/°C
1N3062
1N3063
1N3064
1N4454
1N4305
|
}
J
1
J
3.0
mV/°C
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