DISCRETE SEMICONDUCTORS
DATA SHEET
M3D088
PBSS4120T
20 V, 1 A
NPN low V
CEsat
(BISS) transistor
Product data sheet
2003 Sep 29
NXP Semiconductors
Product data sheet
20 V, 1 A
NPN low V
CEsat
(BISS) transistor
FEATURES
•
Low collector-emitter saturation voltage V
CEsat
•
High collector current capability I
C
and I
CM
•
High efficiency leading to less heat generation
•
Reduced printed-circuit board requirements
•
Cost effective alternative to MOSFETs in specific
applications.
APPLICATIONS
•
Power management
– DC/DC conversion
– Supply line switching
– Battery charger
– LCD backlighting.
•
Peripheral driver
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
handbook, halfpage
PBSS4120T
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX.
20
1
3
200
UNIT
V
A
A
mΩ
– Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTION
NPN BISS transistor in a SOT23 plastic package providing
ultra low V
CEsat
and R
CEsat
parameters.
PNP complement: PBSS5120T.
MARKING
TYPE NUMBER
PBSS4120T
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS4120T
−
DESCRIPTION
MARKING CODE
(1)
*3B
1
Top view
3
3
1
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
plastic surface mounted package; 3 leads
2003 Sep 29
2
NXP Semiconductors
Product data sheet
20 V, 1 A
NPN low V
CEsat
(BISS) transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
T
amb
≤
25
°C;
note 2
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS4120T
MAX.
30
20
5
1
3
300
300
480
+150
150
+150
V
V
V
A
A
UNIT
mA
mW
mW
°C
°C
°C
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
in free air; note 2
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
VALUE
417
260
UNIT
K/W
K/W
2003 Sep 29
3
NXP Semiconductors
Product data sheet
20 V, 1 A
NPN low V
CEsat
(BISS) transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
= 30 V; I
E
= 0
V
CB
= 30 V; I
E
= 0; T
j
= 150
°C
V
EB
= 4 V; I
C
= 0
V
CE
= 2 V; I
C
= 100 mA
V
CE
= 2 V; I
C
= 500 mA
V
CE
= 2 V; I
C
= 1 A
V
CEsat
collector-emitter saturation voltage
I
C
= 100 mA; I
B
= 1 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 750 mA; I
B
= 15 mA
I
C
= 1 A; I
B
= 50 mA; note 1
R
CEsat
V
BEsat
V
BEon
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
= 1 A; I
B
= 100 mA; note 1
V
CE
= 2 V; I
C
= 100 mA
I
C
= 100 mA; V
CE
= 10 V;
f = 100 MHz
V
CB
= 10 V; I
E
= I
e
= 0;
f = 1 MHz
MIN.
−
−
−
350
300
280
−
−
−
−
−
−
100
−
PBSS4120T
TYP.
−
−
−
470
450
420
−
−
−
−
−
−
−
−
−
MAX.
100
50
100
−
−
−
80
110
200
250
220
1.1
0.75
−
20
UNIT
nA
μA
nA
mV
mV
mV
mV
mΩ
V
V
MHz
pF
I
C
= 500 mA; I
B
= 50 mA; note 1
−
2003 Sep 29
4
NXP Semiconductors
Product data sheet
20 V, 1 A
NPN low V
CEsat
(BISS) transistor
PACKAGE OUTLINE
PBSS4120T
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2003 Sep 29
5
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