IPD230N06N G
OptiMOS
®
Power-Transistor
Features
• For dc/dc converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Pb-free lead plating, RoHS compliant
• Avalanche rated
Product Summary
V
DS
R
DS(on),max
I
D
60
23
30
V
mΩ
A
Type
IPD230N06N G
Package
Marking
PG-TO252-3
230N06N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
TC=25 °C
1)
T
C
=100 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
30
30
120
150
6
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
2)
I
D
=30 A,
R
GS
=25
Ω
I
D
=30 A,
V
DS
=48 V,
di /dt =200 A/µs,
T
j,max
=175 °C
mJ
kV/µs
V
W
°C
T
C
=25 °C
100
-55 ... 175
55/175/56
Current is limited by bondwire;with an R
thJC
=1.5 K/W the chip is able to carry 43 A.
See figure 3
Rev. 1.2
page 1
2008-09-01
IPD230N06N G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=50 µA
V
DS
=60 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=60 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
GSS
R
DS(on)
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=30 A
60
2.1
-
-
3
0.01
-
4
1
µA
V
-
-
-
-
-
1.5
75
50
K/W
Values
typ.
max.
Unit
-
-
-
-
17
1
1
18
1.6
34
100
100
23
-
-
nA
mΩ
Ω
S
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
3)
Rev. 1.2
page 2
2008-09-01
IPD230N06N G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
4)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30 V,
V
GS
=10 V,
I
D
=30 A,
R
G
=12
Ω
V
GS
=0 V,
V
DS
=30 V,
f
=1 MHz
-
-
-
-
-
-
-
860
240
64
10
25
26
24
1100
320
96
15
37
39
36
pF
ns
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=30 V,
V
GS
=10 V
V
DD
=30 V,
I
D
=30 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
-
5
2.6
9.7
12
23
5.5
9
6
3
14.6
17
31
-
11
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
V
R
=30 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
0.91
39
48
30
120
1.3
48
60
A
V
ns
nC
See figure 16 for gate charge parameter definition
Rev. 1.2
page 3
2008-09-01
IPD230N06N G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
120
30
100
25
80
20
P
tot
[W]
60
I
D
[A]
0
50
100
150
200
15
40
10
20
5
0
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
limited by on-state
resistance
1 µs
10 µs
100 µs
10
2
10
0
0.5
Z
thJC
[K/W]
I
D
[A]
10
1
DC
0.2
1 ms
0.1
10 ms
10
-1
0.05
0.02
10
0
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.2
page 4
2008-09-01
IPD230N06N G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
80
10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
60
70
60
7V
6.5 V
50
5V
5.5 V
I
D
[A]
6V
40
30
5.5 V
R
DS(on)
[m
Ω
]
50
40
6V
z
30
6.5 V
7V
20
20
5V
10 V
10
0
0
1
2
3
4
5
6
7
8
10
0
10
20
30
40
50
60
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
40
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
50
45
40
30
35
30
20
g
fs
[S]
175 °C
25 °C
I
D
[A]
25
20
15
10
10
5
0
0
1
2
3
4
5
6
7
0
0
10
20
30
40
50
60
V
GS
[V]
I
D
[A]
Rev. 1.2
page 5
2008-09-01
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