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B25DS100K

Description
Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 1000V V(DRM), 1000V V(RRM), 2 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size43KB,1 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

B25DS100K Overview

Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 1000V V(DRM), 1000V V(RRM), 2 Element

B25DS100K Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PUFM-X5
Reach Compliance Codecompliant
Shell connectionISOLATED
Nominal circuit commutation break time110 µs
ConfigurationSERIES CONNECTED, 2 ELEMENTS
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current60 mA
Maximum DC gate trigger voltage2 V
Quick connection description2G
Description of screw terminalsA-K-AK
Maximum holding current100 mA
JESD-30 codeR-PUFM-X5
JESD-609 codee0
Maximum leakage current10 mA
On-state non-repetitive peak current410 A
Number of components2
Number of terminals5
Maximum on-state current25000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current39.25 A
Maximum repetitive peak off-state leakage current10000 µA
Off-state repetitive peak voltage1000 V
Repeated peak reverse voltage1000 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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