H2N7002KN datasheet, PDF - EEWORLD Datasheet

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H2N7002KN: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size126KB，5 Pages; ManufacturerHSMC; Websitehttp://www.hsmc.com.tw/

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H2N7002KN Overview

Transistor

H2N7002KN Parametric

Parameter Name	Attribute value
Maker	HSMC
package instruction	,
Reach Compliance Code	unknown

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HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200803

Issued Date : 2005.03.13

Revised Date :

Page No. : 1/5

H2N7002K

N-CHANNEL TRANSISTOR

Description

N-channel enhancement-mode MOS transistor.

ESD protected

Absolute Maximum Ratings

Drain-Source Voltage ............................................................................................................................................ 60 V

Drain-Gate Voltage (R

=1MΩ)............................................................................................................................. 60 V

Gate-Source Voltage ...........................................................................................................................................

±20

(1)

Continuous Drain Current (T

=25°C) ............................................................................................................. 200 mA

(1)

Continuous Drain Current (T

=100°C) ........................................................................................................... 115 mA

(2)

Pulsed Drain Current (T

=25°C) .................................................................................................................... 800 mA

Total Power Dissipation (T

=25°C).................................................................................................................. 200 mW

Derate above 25°C .................................................................................................................................. 0.16 mW /

°C

Storage Temperature............................................................................................................................... -55 to 150

°C

Operating Junction Temperature ............................................................................................................. -55 to 150

°C

Lead Temperature, for 10 second Soldering ...................................................................................................... 260

°C

Gate Source ESD Rating……………………………………………………………………………………………….… 2KV

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient................................................................................................... 625

°C

/ W

Electrical Characteristics

=25°C)

Parameter

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate Source Leakage Current, Forward

Gate Source leakage Current, Reverse

Zero Gate Voltage Drain Current

On-State Drain Current

Static Drain-Source On-State Voltage

Symbol

DSS

GS(th)

GSS/F

GSS/R

DSS

D(ON)

DS(ON)

Test Conditions

=0, I

=10uA

=2.5V, I

=0.25mA

=+20V, V

=-20V, V

=48V, V

>2V

DS(ON)

, V

=10V

=50mA, V

=5V

=500mA, V

=10V

=75mA, V

=4.5V

Static Drain-Source On-State Resistance

Forward Transconductance

Turn-on Delay Time

Turn-off Delay Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

DS(ON)

d(on)

d(off)

iss

oss

rss

=25V, V

=0, f=1MHz

=50mA, V

=5V

=500mA, V

=10V

>2V

DS(ON)

, I

=200mA

=50V, R

=250Ω,

=10V, R

=50Ω)

5.0

Min

500

Typ.

Max

2.0

100

-100

0.375

3.75

Unit

(1)The Power Dissipation of the package may result in a continuous drain current.

(2)Pulse Width≤300us, Duty cycle≥2%.

H2N7002K

HSMC Product Specification

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