EEWORLDEEWORLDEEWORLD

Part Number

Search

GS8182T18GBD-267

Description
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, ROHS COMPLIANT, FPBGA-165
Categorystorage    storage   
File Size340KB,37 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance  
Download Datasheet Parametric View All

GS8182T18GBD-267 Overview

DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, ROHS COMPLIANT, FPBGA-165

GS8182T18GBD-267 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length15 mm
memory density18874368 bit
Memory IC TypeDDR SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX18
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
Preliminary
GS8182T08/09/18/36BD-333/300/267/250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaCIO™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write (x36 and x18) and Nybble Write (x8) function
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 9Mb, 36Mb, and 72Mb and
future 144Mb devices
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
18Mb SigmaCIO DDR-II
Burst of 2 SRAM
333 MHz–167 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
Bottom View
165-Bump, 13 mm x 15 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Common I/O x36 and x18 SigmaCIO DDR-II B2 RAMs
always transfer data in two packets. When a new address is
loaded, A0 presets an internal 1 bit address counter. The
counter increments by 1 (toggles) for each beat of a burst of
two data transfer.
Common I/O x8 SigmaCIO DDR-II B2 RAMs always transfer
data in two packets. When a new address is loaded, the LSB
is internally set to 0 for the first read or write transfer, and
incremented by 1 for the next transfer. Because the LSB is
tied off internally, the address field of a x8 SigmaCIO DDR-II
B4 RAM is always one address pin less than the advertised
index depth (e.g., the 2M x 9 has a 1M addressable index).
SigmaCIO™ Family Overview
The GS8182T08/09/18/36BD are built in compliance with the
SigmaCIO DDR-II SRAM pinout standard for Common I/O
synchronous SRAMs. They are 16,777,216-bit (18Mb)
SRAMs. The GS8182T08/09/18/36BD SigmaCIO SRAMs are
just one element in a family of low power, low voltage HSTL
I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS8182T08/09/18/36BD SigmaCIO DDR-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
C clock inputs. C and C are also independent single-ended
Parameter Synopsis
-333
tKHKH
tKHQV
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-267
3.75 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.5 ns
Rev: 1.00a 6/2007
1/37
© 2007, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号