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SRA2206EF

Description
PNP Silicon Transistor
CategoryDiscrete semiconductor    The transistor   
File Size246KB,4 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
Download Datasheet Parametric View All

SRA2206EF Overview

PNP Silicon Transistor

SRA2206EF Parametric

Parameter NameAttribute value
MakerKODENSHI
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)80
Number of components1
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
SRA2206EF
PNP Silicon Transistor
Descriptions
Switching application
Interface circuit and driver circuit application
PIN Connection
OUT
OUT
IN
Features
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and
manufacturing process
High packing density
COMMON
IN
R
1
R
1
4.7KΩ
R
2
47KΩ
R
2
Ordering Information
Type NO.
SRA2206EF
Marking
6R
① ②
①Device
Code
Year&Week Code
COMMON
Package Code
SOT-523F
Absolute Maximum Ratings
Characteristic
Output voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature range
(Ta=25°C)
Symbol
V
O
V
I
I
O
P
D
T
J
T
stg
Rating
-50
-20, 5
-100
150
150
-55 ~ 150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Output cut-off current
DC current gain
Output voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Input current
Input resistor (Input to base)
Input resistor (Base to common)
(Ta=25°C)
Symbol
I
O(OFF)
G
I
V
O(ON)
V
I(ON)
V
I(OFF)
f
T
*
I
I
R
1
R
2
Test Condition
V
O
=-50V, V
I
=0
V
O
=-5V, I
O
=-10mA
I
O
=-10mA, I
I
=-0.5mA
V
O
=-0.2V, I
O
=-5mA
V
O
=-5V, I
O
=-0.1mA
V
O
=-10V, I
O
=-5mA, f=1MHz
V
I
=-5V, I
O
=0
-
-
Min. Typ. Max.
-
80
-
-
-0.5
-
-
3.3
33
-
200
-0.1
-0.9
-0.65
200
-
4.7
47
-500
-
-0.3
-1.3
-
-
-1.8
6.1
61
Unit
nA
-
V
V
V
MHz
mA
* : Characteristic of transistor only
KSD-R5E034-000
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