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MSS60,CR53-E45

Description
Mixer Diode, Silicon, CERAMIC, CASE E45, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size92KB,2 Pages
ManufacturerCobham PLC
Environmental Compliance
Download Datasheet Parametric View All

MSS60,CR53-E45 Overview

Mixer Diode, Silicon, CERAMIC, CASE E45, 4 PIN

MSS60,CR53-E45 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCobham PLC
package instructionS-CXMW-F4
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCROSSOVER RING, 4 ELEMENTS
Diode component materialsSILICON
Diode typeMIXER DIODE
JESD-30 codeS-CXMW-F4
JESD-609 codee4
Number of components4
Number of terminals4
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formMICROWAVE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
MSS CR Series
Silicon Schottky Crossover Quad Diodes
r
Description
The Aeroflex / Metelics MSS CR Series of Schottky crossover
quad diodes are fabricated on N-Type epitaxial substrates using
proprietary processes that yield the highest FCOs in the industry.
Barrier heights for LO power levels from 3 dBm to +17 dBm are
available..
Features
Five different barrier heights
Beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Operation Temperature
Storage Temperature
Power Dissipation
Soldering Temperature (Packaged)
Beam Lead Pull Strength
Rated V
BR
50 mA
-65 ºC to +1 ºC
50
-65 ºC to +1 ºC
50
100 mW per junction at T
A
= 25 ºC, derate
linearly to zero at T
A
= +1 ºC
50
+ 260 ºC for 5 sec.
4 grams minimum
Rating
Beam Lead
Electrical Specifications,
T
A
= 25 ºC
V
F
C
J
TYP
C
J
MAX
R
D
TYP
R
D
MAX
Outline
Model
MSS30, CR46-B49
MSS30, CR53-B49
MSS40, CR46-B49
MSS40, CR53-B49
Test
Conditions
TYP
mV
pF
pF
280
260
470
430
I
F
= 1 mA
0.09
0.15
0.09
0.15
V
R
= 0 V
F = 1 MHz
0.125
0.250
0.125
0.250
15
10
15
10
I
F
= 5 mA
22
1
5
22
1
5
B49
B49
B49
B49
Revision Date: 05/23/05

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