1.930 -1.995 GHz
Small-Cell Power Amplifier Module
FEATURES
•
•
•
•
•
•
•
•
InGaP HBT Technology
-50 dBc ACPR @
65
MHz, +27 dBm
29 dB Gain
High Efficiency
Low Transistor Junction Temperature
Matched for a 50
Ω
System
Low Profile Miniature Surface Mount Package;
RoHS Compliant
Multi-Carrier Capability
AWB7223
DATA SHEET - Rev 2.0
APPLICATIONS
•
•
•
•
WCDMA, HSDPA and LTE Air Interfaces
Picocell, Femtocell, Home Nodes
Customer Premises Equipment (CPE)
Data Cards and Terminals
M52 Package
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7223 is a fully matched, Multi-Chip-Module
(MCM) designed for picocell, femtocell, and customer
premises equipment (CPE) applications. Its high
linearity and efficiency meet the extremely demanding
needs of small cell infrastructure architectures.
Designed for WCDMA, HSDPA, and LTE air interfaces
operating in the 1.930 GHz to 1.995 GHz band, the
AWB7223 delivers up to +27 dBm of WCDMA (64
DPCH) power with an ACPR better than -50 dBc. It
Vcc 1
operates from a convenient +4.5 V supply and provides
29 dB of gain. The device is manufactured using an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. The self-contained 7 mm x 7 mm x 1.3
mm surface mount package incorporates RF matching
networks optimized for output power, efficiency, and
linearity in a 50 Ω system.
Vcc 2
RF Input
Matching
Network
Matching
Network
Bias
Network
Matching
Network
Matching
Network
RF Output
Bias
Network
Power
Detector
V
REF
V
DET
Figure 1: Block Diagram
03/2014
AWB7223
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
Supply Voltage (V
CC
)
Reference Voltage (V
REF
)
RF Output Power (P
OUT
)
ESD Rating
Human Body Model
(1)
Charged Device Model
(2)
MSL Rating
(3)
Junction Temperature (T
j
)
Storage Temperature (T
STG
)
MIN
0
0
-
Class 1C
Class IV
4
-
-40
MAX
+5
+3.5
+30
-
-
-
+150
+150
°C
°C
UNIT
V
V
dBm
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure to
absolute ratings for extended periods of time may adversely affect reliability.
Notes:
(1) JEDEC JS-001-2010.
(2) JEDEC JESD22-C101D.
(3) 260
°C
peak reflow.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
Supply Voltage (V
CC
)
Reference Voltage (V
REF
)
RF Output Power (P
OUT
)
Case Temperature (T
C
)
MIN
1930
+3.6
+2.75
0
-
-40
TYP
-
+4.5
+2.85
-
+27
-
MAX
1995
+4.65
+2.95
+0.5
-
+85
UNIT
MHz
V
V
dBm
°C
PA "on"
PA "shut down"
COMMENTS
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
3
DATA SHEET - Rev 2.0
03/2014
AWB7223
Table 4: Electrical Specifications
(T
C
= +25 °C, V
CC
= +4.5 V, V
REF
= +2.85 V, 50
Ω
system)
PARAMETER
Gain
(2)
ACPR
(1), (2), (3)
@ 5 MHz
@ 10 MHz
Power-Added Efficiency
(1), (2), (3)
Thermal Resistance (R
JC
)
(4)
Supply Current
(1), (2), (3)
Quiescent Current (Icq)
Reference Current
Leakage Current
Harmonics
2f
O
3f
O
, 4f
O
Input Return Loss
Output Return Loss
P1dB
Spurious Output Level
(all spurious outputs)
MIN
27
-
-
12
-
-
200
12
-
-
-
15
15
-
TYP
29
-50
-63
14
12
795
275
14
3
-50
-54
20
20
+35
MAX
34
-47
-60
-
-
930
330
19
10
-45
-50
-
-
-
UNIT
dB
dBc
%
°C/W
mA
mA
mA
µA
through V
REF
pin
V
CC
= +5 V, V
REF
= 0 V
Junction to Case
total through V
CC
pins
COMMENTS
1930 - 1995 MHz
dBc
dB
dBm
dBm
CW tone
P
OUT
≤
+27 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all voltage and
temperature operating ranges
V
CC
= +4.5 V, P
OUT
= +27 dBm
Applies over full operating
temperature range
-
-
-60
dBc
Load mismatch stress with no
permanent degradation or failure
8:1
-
-
VSWR
Notes:
(1) ACPR and Efficiency measured at 1960 MHz.
(2) P
OUT
= +27 dBm.
(3) TM1 WCDMA 64 DPCH.
(4) Use only V
CC2
(pin 11) current when calculating device junction temperature.
4
DATA SHEET - Rev 2.0
03/2014
AWB7223
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the V
REF
voltage.
V
REF
0.1uF
1000pF
V
REF
GND
GND
1
2
3
4
5
6
7
GND
at slug
14
13
12
AWB7223
11
10
9
8
GND
GND
RF
OUT
V
CC2
GND
GND
GND
1000pF
0.1uF
10uF
100uF
100uF
TVS
Diode
RF Output
V
CC2
V
CC1
TVS
Diode
100uF
10uF
0.1uF
1000pF
V
CC1
RF
IN
GND
V
DET
RF Input
DET
OUT
0.1uF
100KΩ
4.7KΩ
Notes:
1. 10uF and 100uF capacitors are optional.
2. Applications that have large supply voltage transients may benefit from the use of TVS
diodes. For such applications, recommended TVS diodes are SM05T1G or SMJ5.0A.
Figure 3: Application Circuit Schematic
5
DATA SHEET - Rev 2.0
03/2014
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