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10MQ040NPBF_10

Description
1.5 A, 40 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size108KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

10MQ040NPBF_10 Overview

1.5 A, 40 V, SILICON, RECTIFIER DIODE

10MQ040NPBF_10 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, SMA, SIMILAR TO D-64, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage40 V
Maximum average forward current1.5 A
Maximum non-repetitive peak forward current120 A
VS-10MQ040NPbF
Vishay High Power Products
Schottky Rectifier, 2.1 A
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
Cathode
Anode
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
SMA
PRODUCT SUMMARY
I
F(AV)
V
R
2.1 A
40 V
DESCRIPTION
The VS-10MQ040NPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
1.5 Apk, T
J
= 125 °C
Range
DC
CHARACTERISTICS
VALUES
2.1
40
120
0.56
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-10MQ040NPbF
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
L
= 123 °C, rectangular waveform
On PC board 9 mm
2
island
(0.013 mm thick copper pad area)
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
1.5
120
A
30
3.0
1.0
mJ
A
UNITS
A
Document Number: 94117
Revision: 03-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
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