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MBR1545CTP

Description
10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size126KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

MBR1545CTP Overview

10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB

VS-MBRB15..CTPbF, VS-MBR15..CT-1PbF Series
Vishay High Power Products
Schottky Rectifier, 2 x 7.5 A
VS-MBRB15..CTPbF
VS-MBR15..CT-1PbF
FEATURES
150 °C T
J
operation
Center tap TO-220 package
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
D
2
PAK
TO-262
DESCRIPTION
The VS-MBR(B)15... center tap Schottky rectifier has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
2 x 7.5 A
35 V/45 V
15 mA at 125 °C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
7.5 Apk, T
J
= 125 °C
CHARACTERISTICS
Rectangular waveform
VALUES
15
35/45
690
0.57
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB1535CTPbF
VS-MBR1535CT-1PbF
35
VS-MBRB1545CTPbF
VS-MBR1545CT-1PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
Maximum peak one cycle
non-repetitive surge
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
T
C
= 131 °C, rated V
R
5 μs sine or 3 μs
rect. pulse
Following any rated load condition
and with rated V
RRM
applied
VALUES
7.5
15
690
150
7
2
mJ
A
A
UNITS
I
FSM
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
T
J
= 25 °C, I
AS
= 2 A, L = 3.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
E
AS
I
AR
Document Number: 94303
Revision: 15-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
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