3 A, 50 V, SILICON, RECTIFIER DIODE
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Vishay |
package instruction | R-PDSO-C2 |
Reach Compliance Code | unknow |
application | EFFICIENCY |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.3 V |
JESD-30 code | R-PDSO-C2 |
JESD-609 code | e0 |
Maximum non-repetitive peak forward current | 100 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -65 °C |
Maximum output current | 3 A |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 50 V |
Maximum reverse recovery time | 0.15 µs |
surface mount | YES |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | C BEND |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
RS3A | RS3K-E3 | RS3K | RS3B | RS3D | RS3G | |
---|---|---|---|---|---|---|
Description | 3 A, 50 V, SILICON, RECTIFIER DIODE | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB | 3 A, 100 V, SILICON, RECTIFIER DIODE | 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB |
Is it Rohs certified? | incompatible | conform to | incompatible | incompatible | incompatible | incompatible |
Maker | Vishay | Vishay | Vishay | Vishay | Vishay | Vishay |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
application | EFFICIENCY | EFFICIENCY | EFFICIENCY | EFFICIENCY | EFFICIENCY | EFFICIENCY |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V | 1.3 V |
JESD-30 code | R-PDSO-C2 | R-PDSO-C2 | R-PDSO-C2 | R-PDSO-C2 | R-PDSO-C2 | R-PDSO-C2 |
JESD-609 code | e0 | e3 | e0 | e0 | e0 | e0 |
Maximum non-repetitive peak forward current | 100 A | 100 A | 100 A | 100 A | 100 A | 100 A |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
Phase | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Minimum operating temperature | -65 °C | -55 °C | -65 °C | -65 °C | -65 °C | -65 °C |
Maximum output current | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | 260 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 50 V | 800 V | 800 V | 100 V | 200 V | 400 V |
Maximum reverse recovery time | 0.15 µs | 0.5 µs | 0.5 µs | 0.15 µs | 0.15 µs | 0.15 µs |
surface mount | YES | YES | YES | YES | YES | YES |
Terminal surface | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | C BEND | C BEND | C BEND | C BEND | C BEND | C BEND |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED | 30 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
package instruction | R-PDSO-C2 | R-PDSO-C2 | R-PDSO-C2 | R-PDSO-C2 | - | R-PDSO-C2 |