APM9930/C
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
•
N-Channel
20V/15A, R
DS(ON)
=12mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=17mΩ(typ.) @ V
GS
=4.5V
R
DS(ON)
=25mΩ(typ.) @ V
GS
=2.5V
Pin Description
APM9930
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
S1
G1
S2
G2
APM9930C
1
2
3
4
8
7
6
5
D
D
D
D
•
P-Channel
-20V/-5A, R
DS(ON)
=60mΩ(typ.) @ V
GS
=-10V
R
DS(ON)
=72mΩ(typ.) @ V
GS
=-4.5V
R
DS(ON)
=98mΩ(typ.) @ V
GS
=-2.5V
SO-8
D1
D1
SO-8
D
•
•
•
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SO-8 Package
S1
S1
S2
G1
G1
G2
N-Channel MOSFET
Applications
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G2
N- and P-Channel
MOSFET
S2
D2
D2
P-Channel MOSFET
Ordering and Marking Information
APM9930/C
Handling Code
Temp. Range
Package Code
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TR : Tape & Reel
APM9930/C K :
APM9930/C
XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
1
www.anpec.com.tw
APM9930/C
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
P
D
T
J
T
STG
R
θjA
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
T
A
=25°C
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
T
A
=100°C
(T
A
= 25°C unless otherwise noted)
N-Channel
20
±12
15
30
2.5
1.0
150
-55 to 150
50
P-Channel
-20
±12
-5
-10
2.5
W
1.0
°C
°C
°C/W
A
V
Unit
* Surface Mounted on FR4 Board, t
≤
10 sec.
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
APM9930/C
Min.
N-Ch
20
-20
1
-1
0.6
-0.6
1.3
-1.3
±100
±100
12
N-Ch
17
25
60
P-Ch
72
98
15
20
30
70
80
105
mΩ
nA
Typ. Max.
Test Condition
Unit
V
GS
=0V , I
DS
=250µA
V
DS
=18V , V
GS
=0V
V
DS
=-18V , V
GS
=0V
V
DS
=V
GS
, I
DS
=250µA
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±12V , V
DS
=0V
V
GS
=±10V , V
DS
=0V
V
GS
=10V , I
DS
=15A
V
GS
=4.5V , I
DS
=5A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
V
µA
V
Gate Leakage Current
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=2.5V , I
DS
=2A
V
GS
=-10V , I
DS
=-5A
V
GS
=-4.5V , I
DS
=-3.2A
V
GS
=-2.5V , I
DS
=-1A
Notes
a
: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
2
www.anpec.com.tw
APM9930/C
Electrical Characteristics (Cont.)
(T
A
= 25°C unless otherwise noted)
Symbol
V
SD
a
Dynamic
a
Q
g
Q
gs
Q
gd
t
d(ON)
Parameter
Diode Forward Voltage
Test Condition
I
SD
=5A , V
GS
=0V
I
SD
=-2A , V
GS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
P-Channel
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
V
GS
=0V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
V
DD
=-10V , I
DS
=-1A ,
V
GEN
=-4.5V , R
G
=10Ω
APM9930/C
Min.
0.6
-0.6
14
6.8
5
3.6
2.8
1.08
6
21
5
45
16
36
5
20
1225
495
330
130
220
60
12
42
10
85
40
80
20
40
Typ. Max.
1.3
-1.3
22
16
Unit
V
Total Gate Charge
N-Channel
V
DS
=10V , I
DS
= 6A
V
GS
=4.5V
P-Channel
V
DS
=-10V , I
DS
=-1A
V
GS
=-4.5V
N-Channel
V
DD
=10V , I
DS
=1A ,
V
GEN
=4.5V , R
G
=10
Ω
Gate-Source Charge
nC
Gate-Drain Charge
Turn-on Delay Time
T
r
Turn-on Rise Time
ns
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V
Frequency=1.0MHz
pF
Notes
a
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
3
www.anpec.com.tw
APM9930/C
Typical Characteristics
N-Channel
Output Characteristics
20
V
GS
=3,4,5,6,7,8,9,10V
Transfer Characteristics
20
I
D
-Drain Current (A)
I
D-
Drain Current (A)
16
V
GS
=2.5V
15
12
10
8
V
GS
=2V
T
J
=125°C
5
T
J
=25°C
T
J
=-55°C
4
0
0
2
4
6
8
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
I
DS
=250uA
On-Resistance vs. Drain Current
0.030
V
GS(th)-
Threshold Voltage (V)
(Normalized)
1.00
0.75
0.50
0.25
0.00
-50
R
DS(ON)
-On-Resistance (Ω)
1.25
0.025
0.020
0.015
0.010
0.005
0.000
V
GS
=4.5V
V
GS
=10V
-25
0
25
50
75
100 125 150
0
4
8
12
16
20
Tj - Junction Temperature (°C)
I
D
- Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
4
www.anpec.com.tw
APM9930/C
Typical Characteristics (Cont.)
N-Channel
On-Resistance vs. Gate-to-Source Voltage
0.16
I
D
=15A
On-Resistance vs. Junction Temperature
2.0
V
GS
=10V
I
D
=15A
R
DS(ON)
-On-Resistance (Ω)
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
1
2
3
4
5
6
7
8
9
10
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
0.14
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100 125
150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
10
V
DS
=10V
I
D
=6A
Capacitance
1800
Frequency=1MHz
V
GS
-Gate-Source Voltage (V)
8
1500
Capacitance (pF)
Ciss
6
1200
900
600
Coss
4
2
300
Crss
0
0
5
10
15
20
25
30
0
0
5
10
15
20
Q
G
- Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
5
www.anpec.com.tw
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