RU6H10P
N-Channel Advanced Power MOSFET
MOSFET
Features
• 600V/10A,
R
DS (ON)
=
0.65Ω
(Type)
@
V
GS
=10V
•
Gate charge minimized
•
Low Crss( Typ. 15pF)
• Extremely high dv/dt capability
•
100% avalanche tested
• Lead Free and Green Available
Pin Description
TO-220
TO-220F
TO-263
TO-247
Applications
•
High efficiency switch mode power
supplies
•
Electronic lamp ballasts based on half
bridge
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
600
±30
150
-55 to 150
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
10
①
①
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
A
A
W
°C/W
Mounted on Large Heat Sink
I
DP
300μs Pulse Drain Current Tested
I
D
P
D
R
θJC
②
40
10
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
7
35
14
①
3.6
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
450
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
www.ruichips.com
RU6H10P
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
A
=25°C Unless Otherwise Noted)
RU6H10P
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
= 600V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±30V, V
DS
=0V
V
GS
= 10V, I
DS
=5A
600
1
30
3
-
5
±100
0.65
0.75
V
µA
V
nA
Ω
Diode Characteristics
V
SD
t
rr
Q
rr
③
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
④
I
SD
=10 A, V
GS
=0V
I
SD
=10A, dl
SD
/dt=100A/µs
239
2.7
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 30V,
Frequency=1.0MHz
10
1110
130
15
13
V
DD
=300V, R
L
=30Ω,
I
DS
=10A, V
GEN
= 10V,
R
G
=47Ω
15
29
16
1.3
V
ns
µC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
①Current
limited by maximum junction temperature.
②Limited
by T
Jmax
, I
AS
=10A, V
DD
= 100V, R
G
= 47Ω , Starting T
J
= 25°C.
③Pulse
test ; Pulse width≤300
µ
s, duty cycle≤2%.
④Guaranteed
by design, not subject to production testing.
40
V
DS
=480V, V
GS
= 10V,
I
DS
=10A
9
17
52
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
2
www.ruichips.com
RU6H10P
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Safe Operation Area
P
tot
- Power (W)
Thermal Transient Impedance
V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
3
Normalized Effective Transient
Square Wave Pulse Duration (sec)
www.ruichips.com
I
D
- Drain Current (A)
RU6H10P
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (Ω)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
V
GS
- Gate-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
4
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
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R
DS(ON)
- On - Resistance ()
RU6H10P
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
I
S
- Source Current (A)
V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
5
V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
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