MM1Z5221B~MM1Z5267B
SILICON PLANAR ZENER DIODES
PINNING
PIN
DESCRIPTION
Cathode
Anode
2
Features
• Total power dissipation: Max. 500 mW
• Small plastic package suitable for
surface mounted design
• Tolerance approximately ± 5%
1
2
1
Top View
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
P
tot
T
j
T
Stg
Value
500
150
- 55 to + 150
Unit
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at I
F
= 10 mA
Symbol
R
θJA
V
F
Max.
350
0.9
Unit
O
C/W
V
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
MM1Z5221B~MM1Z5267B
Characteristics at T
a
= 25
O
C
Type
MM1Z5221B
MM1Z5223B
MM1Z5225B
MM1Z5226B
MM1Z5227B
MM1Z5228B
MM1Z5229B
MM1Z5230B
MM1Z5231B
MM1Z5232B
MM1Z5234B
MM1Z5235B
MM1Z5236B
MM1Z5237B
MM1Z5239B
MM1Z5240B
MM1Z5241B
MM1Z5242B
MM1Z5243B
MM1Z5245B
MM1Z5246B
MM1Z5248B
MM1Z5249B
MM1Z5250B
MM1Z5251B
MM1Z5252B
MM1Z5253B
MM1Z5254B
MM1Z5256B
MM1Z5257B
MM1Z5258B
MM1Z5259B
MM1Z5260B
MM1Z5261B
MM1Z5262B
MM1Z5263B
MM1Z5265B
MM1Z5266B
MM1Z5267B
1)
2)
Marking
Code
A4
B4
C4
D4
E4
F4
H4
J4
K4
M4
N4
P4
R4
X4
Y4
Z4
A5
B5
C5
D5
E5
F5
K9
H5
J5
K5
M9
M5
N5
P5
R5
X5
Y5
Z5
A6
B6
C6
D6
E6
Zener Voltage Range
1)
V
znom
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
19
20
22
24
25
27
30
33
36
39
43
47
51
56
62
68
75
l
ZT
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
8.5
7.8
7
6.6
6.2
5.6
5.2
5
4.6
4.2
3.8
3.4
3.2
3
2.7
2.5
2.2
2
1.8
1.7
for
V
ZT
V
2.28…2.52
2.57…2.84
2.85…3.15
3.14…3.47
3.42…3.78
3.71…4.1
4.09…4.52
4.47…4.94
4.85…5.36
5.32…5.88
5.89…6.51
6.46…7.14
7.13…7.88
7.79…8.61
8.65…9.56
9.5…10.5
10.45…11.55
11.4…12.6
12.35…13.65
14.25…15.75
15.2…16.8
17.1…18.9
18.05…19.95
19…21
20.9…23.1
22.8…25.2
23.75…26.25
25.65…28.35
28.5…31.5
31.35…34.65
34.2…37.8
37.05…40.95
40.85…45.15
44.65…49.35
48.45…53.55
53.2…58.8
58.9…65.1
64.6…71.4
71.25…78.75
Dynamic Impedance
2)
Z
ZT
Ω
(Max.)
30
30
29
28
24
23
22
19
17
11
7
5
6
8
10
17
22
30
13
16
17
21
23
25
29
33
35
41
49
58
70
80
93
105
125
150
185
230
270
Z
ZK
Ω
(Max.)
1200
1300
1600
1600
1700
1900
2000
1900
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1600
1700
at I
ZK
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Reverse Current
I
R
µA (Max.)
100
75
50
25
15
10
5
5
5
5
5
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
at V
R
V
1
1
1
1
1
1
1
2
2
3
4
5
6
6.5
7
8
8.4
9.1
9.9
11
12
14
14
15
17
18
19
21
23
25
27
30
33
36
39
43
47
52
56
V
Z
is tested with pulses (20 ms)
Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified
limits are for I
Z(AC)
= 0.1 I
Z(DC)
with the AC frequency = 1 KHz.
２
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
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