2N7382 datasheet, PDF - EEWORLD Datasheet

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2N7382: DescriptionPower Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size211KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N7382 Overview

Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

2N7382 Parametric

Parameter Name	Attribute value
Objectid	2053606697
Parts packaging code	TO-257AA
package instruction	FLANGE MOUNT, R-XSFM-P3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	11 A
Maximum drain-source on-resistance	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA
JESD-30 code	R-XSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Transistor component materials	SILICON

2N7382 Related Products

	2N7382	JANSF2N7382	JANSR2N7382	JANSD2N7382	JANSM2N7382
Description	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN
Objectid	2053606697	1814919284	2053606725	2053606717	2053606721
Parts packaging code	TO-257AA	TO-257AA	TO-257AA	TO-257AA	TO-257AA
package instruction	FLANGE MOUNT, R-XSFM-P3	TO-257AA, 3 PIN	FLANGE MOUNT, R-XSFM-P3	FLANGE MOUNT, R-XSFM-P3	TO-257AA, 3 PIN
Contacts	3	3	3	3	3
Reach Compliance Code	unknown	unknown	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V	100 V
Maximum drain current (ID)	11 A	11 A	11 A	11 A	11 A
Maximum drain-source on-resistance	0.35 Ω	0.35 Ω	0.35 Ω	0.35 Ω	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA	TO-257AA	TO-257AA	TO-257AA	TO-257AA
JESD-30 code	R-XSFM-P3	R-XSFM-P3	R-XSFM-P3	R-XSFM-P3	R-XSFM-P3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Qualified	Qualified	Qualified	Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Guideline	-	MIL-19500/615	MIL-19500/615	MIL-19500/615	MIL-19500/615

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