Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Motorola ( NXP ) |
| Reach Compliance Code | unknown |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 1.1 A |
| Maximum drain current (ID) | 1.1 A |
| Maximum drain-source on-resistance | 2.4 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 100 pF |
| JESD-30 code | R-PDIP-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 1 W |
| Maximum power dissipation(Abs) | 1 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| IRFD122 | MPF6660 | IRFD211 | IRFD222 | MPF89 | IRFD212 | IRFD121 | |
|---|---|---|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AE | Small Signal Field-Effect Transistor, 0.6A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 0.7A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Small Signal Field-Effect Transistor, 0.45A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 1.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | 60 V | 150 V | 200 V | 200 V | 200 V | 60 V |
| Maximum drain current (ID) | 1.1 A | 2 A | 0.6 A | 0.7 A | 0.4 A | 0.45 A | 1.3 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 100 pF | 10 pF | 25 pF | 80 pF | 3.5 pF | 25 pF | 100 pF |
| JESD-30 code | R-PDIP-T3 | O-PBCY-W3 | R-PDIP-T3 | R-PDIP-T3 | O-PBCY-W3 | R-PDIP-T3 | R-PDIP-T3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | CYLINDRICAL | IN-LINE | IN-LINE | CYLINDRICAL | IN-LINE | IN-LINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | WIRE | THROUGH-HOLE | THROUGH-HOLE | WIRE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | DUAL | BOTTOM | DUAL | DUAL | BOTTOM | DUAL | DUAL |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Shell connection | DRAIN | - | DRAIN | DRAIN | - | DRAIN | DRAIN |
| Maximum drain current (Abs) (ID) | 1.1 A | - | 0.6 A | 0.7 A | 0.4 A | 0.45 A | 1.3 A |
| Maximum drain-source on-resistance | 2.4 Ω | 3 Ω | 0.8 Ω | - | 6 Ω | 1.2 Ω | 1.5 Ω |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| Maximum power consumption environment | 1 W | 2.5 W | 1 W | 1 W | - | 1 W | 1 W |
| Maximum power dissipation(Abs) | 1 W | - | 1 W | 1 W | 0.6 W | 1 W | 1 W |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
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