SILICON CONTROLLED RECTIFIER,200V V(DRM),25A I(T),TO-220
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | NXP |
package instruction | , |
Reach Compliance Code | unknown |
Critical rise rate of minimum off-state voltage | 50 V/us |
Maximum DC gate trigger current | 50 mA |
Maximum DC gate trigger voltage | 1.5 V |
Maximum holding current | 60 mA |
JESD-609 code | e0 |
Maximum leakage current | 2 mA |
On-state non-repetitive peak current | 450 A |
Maximum on-state voltage | 2 V |
Maximum on-state current | 25000 A |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -40 °C |
Off-state repetitive peak voltage | 200 V |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Trigger device type | SCR |
MCR264-4 | MCR264-8 | MCR264-6 | |
---|---|---|---|
Description | SILICON CONTROLLED RECTIFIER,200V V(DRM),25A I(T),TO-220 | SILICON CONTROLLED RECTIFIER,600V V(DRM),25A I(T),TO-220 | SILICON CONTROLLED RECTIFIER,400V V(DRM),25A I(T),TO-220 |
Is it Rohs certified? | incompatible | incompatible | incompatible |
Maker | NXP | NXP | NXP |
Reach Compliance Code | unknown | unknown | unknow |
Maximum DC gate trigger current | 50 mA | 50 mA | 50 mA |
Maximum DC gate trigger voltage | 1.5 V | 1.5 V | 1.5 V |
Maximum holding current | 60 mA | 60 mA | 60 mA |
JESD-609 code | e0 | e0 | e0 |
Maximum leakage current | 2 mA | 2 mA | 2 mA |
On-state non-repetitive peak current | 450 A | 450 A | 450 A |
Maximum on-state voltage | 2 V | 2 V | 2 V |
Maximum on-state current | 25000 A | 25000 A | 25000 A |
Maximum operating temperature | 125 °C | 125 °C | 125 °C |
Minimum operating temperature | -40 °C | -40 °C | -40 °C |
Off-state repetitive peak voltage | 200 V | 600 V | 400 V |
surface mount | NO | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Trigger device type | SCR | SCR | SCR |