Standard SRAM, 64KX1, 35ns, CMOS, CDIP22, 677-06
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Motorola ( NXP ) |
package instruction | DIP, DIP22,.3 |
Reach Compliance Code | unknown |
ECCN code | 3A001.A.2.C |
Maximum access time | 35 ns |
I/O type | SEPARATE |
JESD-30 code | R-CDIP-T22 |
JESD-609 code | e0 |
length | 27.43 mm |
memory density | 65536 bit |
Memory IC Type | STANDARD SRAM |
memory width | 1 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 22 |
word count | 65536 words |
character code | 64000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 64KX1 |
Output characteristics | 3-STATE |
Exportable | NO |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP22,.3 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Certification status | Not Qualified |
Filter level | 38535Q/M;38534H;883B |
Maximum seat height | 4.11 mm |
Maximum standby current | 0.001 A |
Minimum standby current | 2 V |
Maximum slew rate | 0.12 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 10.16 mm |
6287-35/BXAJC | 6287-45/BUAJC | |
---|---|---|
Description | Standard SRAM, 64KX1, 35ns, CMOS, CDIP22, 677-06 | Standard SRAM, 64KX1, 45ns, CMOS, CQCC22, 0.290 X 0.490 INCH, CERAMIC, LCC-22 |
Maker | Motorola ( NXP ) | Motorola ( NXP ) |
package instruction | DIP, DIP22,.3 | QCCN, |
Reach Compliance Code | unknown | unknown |
ECCN code | 3A001.A.2.C | 3A001.A.2.C |
Maximum access time | 35 ns | 45 ns |
JESD-30 code | R-CDIP-T22 | R-CQCC-N22 |
length | 27.43 mm | 12.446 mm |
memory density | 65536 bit | 65536 bit |
Memory IC Type | STANDARD SRAM | STANDARD SRAM |
memory width | 1 | 1 |
Number of functions | 1 | 1 |
Number of ports | 1 | 1 |
Number of terminals | 22 | 22 |
word count | 65536 words | 65536 words |
character code | 64000 | 64000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 125 °C | 125 °C |
Minimum operating temperature | -55 °C | -55 °C |
organize | 64KX1 | 64KX1 |
Output characteristics | 3-STATE | 3-STATE |
Exportable | NO | NO |
Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DIP | QCCN |
Package shape | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | CHIP CARRIER |
Parallel/Serial | PARALLEL | PARALLEL |
Certification status | Not Qualified | Not Qualified |
Maximum seat height | 4.11 mm | 1.98 mm |
Minimum standby current | 2 V | 2 V |
Maximum supply voltage (Vsup) | 5.5 V | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V | 4.5 V |
Nominal supply voltage (Vsup) | 5 V | 5 V |
surface mount | NO | YES |
technology | CMOS | CMOS |
Temperature level | MILITARY | MILITARY |
Terminal form | THROUGH-HOLE | NO LEAD |
Terminal pitch | 2.54 mm | 1.27 mm |
Terminal location | DUAL | QUAD |
width | 10.16 mm | 7.366 mm |