UNISONIC TECHNOLOGIES CO., LTD
UMBF170
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The
UMBF170
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
3
2
1
FEATURES
* R
DS(ON)
<5Ω@V
GS
=10V
* R
DS(ON)
<5.3Ω@V
GS
=4.5V
* Low Reverse Transfer Capacitance ( C
RSS
= typical 7.5 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SOT-23-3
(JEDEC TO-236)
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
UMBF170G-AE2-R
Package
SOT-23-3
1
S
Pin Assignment
2
G
3
D
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R502-291.b
UMBF170
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage (R
G
=25kΩ)
V
DGS
60
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current (V
GS
=10V)
I
D
300
mA
Peak Drain Current (t
P
≦10µs)
I
DM
1.2
A
Power Dissipation
P
D
0.83
W
℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-65 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
SYMBOL
θ
JA
RATINGS
350
UNIT
K/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0 V, I
D
=10µA
V
DS
=48V, V
GS
=0V
V
DS
=25V, V
GS
=0V
V
GS
= ±15V, V
DS
=0V
V
DS
=V
GS
, I
D
=1mA
V
GS
=10V, I
D
=300mA
V
GS
=4.5V, I
D
=75mA
V
DS
=10V, I
D
=200mA
MIN TYP MAX UNIT
60
75
0.01 1.0
5
500
10 100
2
2.8
3.8
300
25
18
7.5
3
12
0.85
V
µA
nA
nA
V
5
5.3
Ω
mS
40
30
10
10
15
1.5
300
1.2
pF
pF
pF
ns
ns
V
mA
A
ns
nC
1
Forward Transconductance
g
FS
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=10 V, V
GS
=0 V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
V
DD
=50V, V
GS
=10V, R
GS
=50Ω
R
G
=50Ω, R
D
=250Ω
Turn-OFF Delay Time
t
D(OFF)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
I
S
=300mA, V
GS
=0V
Maximum Body-Diode Continuous Current
I
S
pulsed; t
P
≦10µs
Peak Source (Diode Forward) Current
I
SM
Body Diode Reverse Recovery Time
t
RR
I
S
=300mA, dI/dt=-100A/μs,
V
GS
=0V, V
DS
=25V
Body Diode Reverse Recovery Charge
Q
RR
100
30
30
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-291.b
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