UNISONIC TECHNOLOGIES CO., LTD
UF740
10A, 400V, 0.55Ω N-CHANNEL
POWER MOSFET
1
1
TO-220
TO-220F
Power MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET
is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
1
TO-220F1
1
TO-220F2
FEATURES
1
TO-263
* 10A, 400V, R
DS(ON)
(0.55Ω)
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
UF740L-TA3-T
UF740G-TA3-T
UF740L-TF1-T
UF740G-TF1-T
UF740L-TF2-T
UF740G-TF2-T
UF740L-TF3-T
UF740G-TF3-T
UF740L-TQ2-T
UF740G-TQ2-T
UF740L-TQ2-R
UF740G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
UF740L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) R: Tape Reel, T: Tube
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2,
(2)
TF3: TO-220F, TQ2: TO-263
(3) L: Lead Free, G: Halogen Free
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QW-R502-078. G
UF740
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, Unless Otherwise Specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
Drain to Source Voltage (T
J
=25°C~125°C)
V
DS
400
Drain to Gate Voltage (R
GS
= 20kΩ) (T
J
=25°C~125°C)
V
DGR
400
Gate to Source Voltage
V
GS
±20
Continuous
I
D
10
Drain Current
T
C
= 100°C
I
D
6.3
Pulsed
I
DM
40
Avalanche Energy
Single Pulsed (Note 3)
E
AS
520
TO-220/TO-263
125
Power Dissipation
TO-220F/TO-220F1
44
TO-220F2
46
P
D
TO-220/TO-263
1.0
Derating above 25°C
TO-220F/TO-220F1
0.35
TO-220F2
0.37
Junction Temperature
T
J
+150
Operating Temperature
T
OPR
-55 ~ +150
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNIT
V
V
V
A
A
A
mJ
W
W/°C
°C
°C
°C
THERMAL DATA
PARAMETER
SYMBOL
θ
JA
θ
Jc
RATINGS
62.5
1.0
2.86
2.72
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
TO-220/TO-263
TO-220F/TO-220F1
TO-220F2
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QW-R502-078. G
UF740
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, Unless Otherwise Specified.)
MAX UNIT
V
4.0
V
A
25
μA
250
±500
0.55
75
145
260
155
μA
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
On-State Drain Current (Note 1)
SYMBOL
TEST CONDITIONS
MIN TYP
BV
DSS
V
GS
= 0V, I
D
= 250μA
400
V
GS(THR)
V
GS
= V
DS
, I
D
= 250μA
2.0
I
D(ON)
V
DS
>I
D(ON)
x R
DS(ON)MAX
, V
GS
=10V
10
V
DS
= Rated BV
DSS
, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=0.8 x Rated BV
DSS
,
V
GS
=0V,T
J
=125°C
Gate to Source Leakage Current
I
GSS
V
GS
= ±20V
Drain to Source On Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 5.2A (Note 1)
0.38
Forward Transconductance
g
FS
V
DS
≥ 50V, I
D
= 5.2A (Note 1)
5.8 8.9
Turn-On Delay Time
t
DLY(ON)
V
DD
= 200V, I
D
≈ 10A,
65
Rise Time
t
R
130
R
GS
= 9.1Ω, R
L
= 20Ω, V
GS
= 10V
Turn-Off Delay Time
t
DLY(OFF)
MOSFET Switching Times are Essentially
240
Independent of Operating Temperature
Fall Time
t
F
145
Total Gate Charge
V
GS
= 10V, I
D
= 10A, I
G(REF)
= 1.5mA,
138
Q
G(TOT)
(Gate to Source + Gate to Drain)
V
DS
= 0.8 x Rated BV
DSS
Gate Charge is Essentially Independent of
Gate to Source Charge
Q
GS
35
Operating Temperature
Gate to Drain “Miller” Charge
Q
GD
35
Input Capacitance
C
ISS
1170
Output Capacitance
C
OSS
V
GS
= 0V, V
DS
=25V, f = 1.0MHz
160
Reverse - Transfer Capacitance
C
RSS
26
Measured From
Modified MOSFET
the Contact Screw Symbol Showing the
3.5
on Tab to Center Internal Devices
Inductances
of Die
Internal Drain Inductance
L
D
Measured From
D
the Drain Lead,
6mm (0.25in)
4.5
L
D
From Package to
Center of Die
G
Measured From
L
S
the Source Lead,
6mm (0.25in)
S
Internal Source Inductance
L
S
7.5
From Header to
Source Bonding
Pad
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage
V
SD
T
J
= 25°C, I
SD
= 10A, V
GS
= 0V (Note 1)
D
Continuous Source to Drain Current
I
S
Modified MOSFET
Symbol Showing
the Integral
Pulse Source to Drain Current
Reverse P-N
G
I
SM
(Note 2)
Junction Diode
S
nH
nH
2.0
10
V
A
40
A
Reverse Recovery Time
t
rr
T
J
= 25°C, I
SD
= 10A, dI
SD
/dt = 100A/μs
Reverse Recovery Charge
Q
RR
T
J
= 25°C, I
SD
= 10A, dI
SD
/dt = 100A/μs
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle≤2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. V
DD
=50V, starting T
J
=25°C, L=9.1mH, R
G
=25Ω, peak I
AS
= 10A
170
1.6
390
4.5
790
8.2
ns
μC
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QW-R502-078. G
UF740
TEST CIRCUITS AND WAVEFORMS
V
DS
L
R
G
D.U.T.
Power MOSFET
BV
DSS
V
DD
I
AS
V
DS
V
DD
0.01Ω
I
AS
Unclamped Energy Test Circuit
0
t
p
t
AV
Unclamped Energy Waveforms
V
DS
R
L
90%
10%
0
R
G
V
DD
V
GS
D.U.T.
V
GS
10%
0
t
D(ON)
t
ON
Switching Time Test Circuit
Resistive Switching Waveforms
t
R
50%
90%
PULSE WIDTH
50%
t
D(OFF)
t
F
t
OFF
CURRENT
REGULATOR
50kΩ
0.2µF
0.3µF
D
V
DS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
V
DD
Q
G(TOT)
Q
GS
Q
GD
V
GS
12V
BATTERY
V
DS
G
I
G(REF)
0
I
G
CURRENT
SAMPLING
RESISTOR
Gate Charge Test Circuit
S
I
G(REF)
I
D
CURRENT
SAMPLING
RESISTOR
0
DUT
0
Gate Charge Waveforms
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QW-R502-078. G
UF740
TYPICAL PERFORMANCE CUVES
Power MOSFET
Forward Bias Safe Operating Area
100
10μs
Output Characteristics
15
V
GS
= 10V
V
GS
= 6.0V
12
9
V
GS
= 5.0V
6
3
0
V
GS
= 4.5V
V
GS
= 4.0V
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
V
GS
= 5.5V
Drain Current, I
D
(A)
10
100μs
1ms
1
OPERATION IN THIS
REGION IS LIMITED BY
R
DS(ON)
T
C
=25℃
T
J
=MAX RATED
SINGLE PULSE
10ms
DC
0.1
Drain Current, I
D
(A)
1
10
10
2
10
3
0
40
80
120
160
200
Drain to Source Voltage, V
DS
(V)
Drain to Source Voltage, V
DS
(V)
Saturation Characteristics
15
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
Transfer Characteristics
100
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
V
DS
≥50V
V
GS
=10V
Drain Current, I
D
(A)
12
9
Drain to Source Current, I
DS (ON)
(A)
V
GS
=6.0V
V
GS
=5.5V
10
V
GS
=5.0V
6
3
0
0
2
4
6
8
10
Drain to Source Voltage, V
DS
(V)
V
GS
=4.5V
V
GS
=4.0V
T
J
= 150℃
1
T
J
= 25℃
0.1
0
2
4
6
8
10
Gate to Source Voltage, V
SD
(V)
Normalized Drain to Source Breakdown Voltage vs. Junction
Temperature
1.25
2500
2000
1500
1000
Capacitance vs. Drain to Source Voltage
I
D
=250μA
Normalized Drain to Source
Breakdown Voltage
1.05
0.95
0.85
0.75
-60 -40 -20
0
20 40 60 80
100 120 140 160
Junction Temperature, T
J
(℃)
Capacitance, C (pF)
1.15
V
GS
=0V, f=1MHz
C
ISS
=C
GS
+C
GD
C
RSS
=C
GD
C
OSS
≈C
DS
+C
GD
C
ISS
C
OSS
500
0
C
RSS
1
2
5
10
2
5
10
2
2
5
10
3
Drain to Source Voltage, V
DS
(V)
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