UNISONIC TECHNOLOGIES CO., LTD
UF640
18 A, 200 V, 0.18 OHM,
N-CHANNEL POWER MOSFET
DESCRIPTION
These kinds of n-channel power MOSFET field effect transistor
have low conduction power loss, high input impedance, and high
switching speed, Linear Transfer Characteristics, so can be use in
a variety of power conversion applications.
The
UF640
suitable for resonant and PWM converter topologies.
1
TO-220
1
TO-252
Power MOSFET
1
TO-263
FEATURES
* R
DS(ON)
=0.18Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (C
RSS
= typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-220F
1
TO-220F2
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
UF640L-TA3-T
UF640G-TA3-T
UF640L-TF2-T
UF640G-TF2-T
UF640L-TF3-T
UF640G-TF3-T
UF640L-TN3-R
UF640G-TN3-R
UF640L-TN3-T
UF640G-TN3-T
UF640L-TQ2-R
UF640G-TQ2-R
UF640L-TQ2-T
UF640G-TQ2-T
Package
TO-220
TO-220F2
TO-220F
TO-252
TO-252
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Tape Reel
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UF640
ABSOLUTE MAXIMUM RATING
(T
C
= 25℃, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
200
V
Drain-Gate Voltage (R
GS
=20kΩ)
V
DGR
200
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
I
D
18
A
Pulsed Drain Current (Note 2)
I
DM
72
A
Single Pulse Avalanche Energy Rating (Note 2)
E
AS
580
mJ
TO-220
123
TO-220F
40
Maximum Power Dissipation
TO-220F2
P
D
42
W
TO-252
83
TO-263
139
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=3.37mH, V
DD
=50V, R
G
=25Ω, peak I
AS
=18A, starting T
J
=25℃.
3. Pulse width limited by T
J(MAX)
THERMAL DATA
PARAMETER
TO-220/ TO-220F
Junction to Ambient
TO-220F2/ TO-263
TO-252
TO-220
TO-220F
Junction to Case
TO-220F2
TO-252
TO-263
SYMBOL
θ
JA
RATINGS
62.5
62.5
110
1.01
3.1
2.9
1.5
0.9
UNIT
°C/W
θ
JC
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
℃
, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On-State Drain Current
Drain-Source On Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(THR)
I
D(ON)
R
DS(ON)
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
I
D
=250μA, V
GS
=0V
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
GS
= ±20V
V
GS
=V
DS
, I
D
=250μA
V
DS
>I
D(ON)
x R
DS(ON)
MAX,V
GS
=10V
I
D
=10A, V
GS
=10V
MIN
200
25
±100
2
18
0.14
1275
400
100
4
0.18
TYP
MAX
UNIT
V
μA
nA
V
A
Ω
pF
pF
pF
V
DS
=25V, V
GS
=0V, f=1MHz
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UF640
PARAMETER
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
SYMBOL
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G(TOT)
Q
GS
Q
GD
TEST CONDITIONS
V
DD
=100V,I
D
≈18A,
R
G
=9.1Ω,R
L
=5.4Ω,
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
V
GS
=10V, I
D
≈18A,
V
DS
=0.8 x Rated
BV
DSS
Gate Charge is Essentially
Independent
of
Operating
Temperature I
G(REF)
= 1.5mA
MIN
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
(T
C
= 25
℃
, unless otherwise specified)
TYP
13
50
46
35
43
8
22
MAX
21
77
68
54
64
UNIT
ns
ns
ns
ns
nC
nC
nC
ELECTRICAL CHARACTERISTICS(Cont.)
TEST CONDITIONS
Modified MOSFET
Measured From
the Contact Screw Symbol Showing
the Internal
on Tab to
Devices
Center of Die
Inductances
Internal Drain Inductance
L
D
Measured From
the Drain Lead,
6mm (0.25in)
From Package to
Center of Die
Measured From
the Source Lead,
6mm (0.25in) from
Internal Source Inductance
L
S
Header to Source
Bonding Pad
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage (Note)
V
SD
T
J
= 25℃, I
S
= 18A, V
GS
= 0V,
Continuous Source Current
Integral Reverse p-n Junction
I
S
(body diode)
Diode in the MOSFET
Drain
PARAMETER
SYMBOL
MIN
TYP
3.5
MAX
UNIT
nH
4.5
nH
7.5
nH
2.0
18
V
A
Pulse Source Current (body diode)
(Note)
I
SM
Gate
Sourse
72
A
Reverse Recovery Time
t
rr
T
J
=25℃, I
S
=18A, dI
S
/dt=100A/μs
Reverse Recovery Charge
Q
RR
T
J
=25℃, I
S
=18A, dI
S
/dt=100A/μs
Note: Pulse Test: Pulse width
≤
300μs, duty cycle
≤
2%.
120
1.3
240
2.8
530
5.6
ns
μC
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UF640
TEST CIRCUIT
Power MOSFET
V
DS
R
L
0
V
DD
V
GS
D.U.T.
90%
10%
90%
R
G
V
GS
10%
0
50%
PULSE WIDTH
50%
t
D(ON)
t
ON
Fig.3 Switching Time Test Circuit
t
R
t
D(OFF)
t
F
t
OFF
Fig.4 Resistive Switching Waveforms
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UF640
TYPICAL CHARACTERISTICS
Saturation Characteristics
30
24
18
12
6
0
0
V
GS
=6V
Pulse Duration = 80µs
Duty Cycle = 0.5% MAX
Power MOSFET
Drain to Source On Resistance vs. Gate
Voltage And Drain Current
1.5
Pulse Duration = 80µs
Duty Cycle = 0.5% Max
1.2
0.8
0.6
V
GS
=10V
0.3
0
0
3.0
4.0
1.0
2.0
5.0
Drain to Source Voltage, V
DS
(V)
45
60
15
30
Drain Current, I
D
(A)
75
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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