UNISONIC TECHNOLOGIES CO., LTD
UTT30N06
30A, 60V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
UTT30N06
is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used in automotive
applications of power supplies, high efficient DC to DC converters
and battery operated products.
Power MOSFET
FEATURES
* R
DS(ON)
= 40mΩ@V
GS
= 10 V
* Ultra low gate charge ( typical 20 nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UTT30N06L-TN3-R
UTT30N06G-TN3-R
TO-252
UTT30N06L-TA3-T
UTT30N06G-TA3-T
TO-220
Note: Pin Assignment: G: Gate D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
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Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-637.A
UTT30N06
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V
DSS
V
GSS
Power MOSFET
RATINGS
UNIT
60
V
±20
V
T
C
= 25°C
30
A
I
D
Continuous
Drain Current
T
C
= 100°C
21.3
A
Pulsed (Note 1)
I
DM
120
A
Single Pulsed (Note 2)
E
AS
300
mJ
Avalanche Energy
8
mJ
Repetitive (Note 1)
E
AR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
7.5
V/ns
TO-220
89
Power Dissipation
P
D
W
TO-252
44
Junction Temperature
T
J
+150
°C
Operation Temperature
T
OPR
-55~+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
1. Repeativity rating: pulse width limited by junction temperature
2. L=0.66mH, I
AS
=30A, V
DD
=25V, R
G
=20Ω, Starting T
J
=25°C
3. I
SD
≤50A,
di/dt≤300A/μs, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-252
TO-220
TO-252
SYMBOL
θ
JA
θ
JC
RATINGS
62
50
1.4
2.85
UNIT
°C/W
°C/W
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QW-R502-637.A
UTT30N06
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0 V, I
D
= 250
μA
60
V
Drain-Source Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
μA
Forward
V
GS
= 20V, V
DS
= 0 V
100 nA
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0 V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA,Referenced to 25℃
0.06
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 15 A
32
40
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
800
pF
V
GS
= 0 V, V
DS
= 25 V,
Output Capacitance
C
OSS
300
pF
f = 1MHz
80
pF
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
12
ns
V
DD
= 30V, I
D
=15 A, V
GS
=10V
Turn-On Rise Time
t
R
79
ns
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
50
ns
52
ns
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
20
30
nC
V
DS
= 60V, V
GS
= 10 V,
Gate-Source Charge
Q
GS
6
nC
I
D
= 24A (Note 1, 2)
Gate-Drain Charge
Q
GD
9
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 30A
1.4
V
Maximum Continuous Drain-Source Diode
Forward Current
I
S
30
120
40
70
A
A
ns
μC
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
= 30A,
dI
F
/ dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test : Pulse width
≤300μs,
Duty cycle
≤
2%
2. Essentially independent of operating temperature.
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QW-R502-637.A
UTT30N06
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-637.A
UTT30N06
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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www.unisonic.com.tw
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QW-R502-637.A
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