UNISONIC TECHNOLOGIES CO., LTD
UTF3055
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
DESCRIPTION
As an N-channel enhancement mode power MOSFET, the UTC
UTF3055
is designed for low voltage, high speed switching
applications in power supplies, converters and power motor controls
and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
<110
mΩ
@V
GS
=10V
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTF3055L-AA3-R
UTF3055G-AA3-R
UTF3055L-TN3-R
UTF3055G-TN3-R
Package
SOT-223
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tape Reel
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ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise noted)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
V
DSS
60
V
Drain Gate Voltage (R
GS
= 10MΩ )
V
DGR
60
V
Continuous
±20
V
Gate Source Voltage
V
GSS
Non-Repetitive (t
P
≤10
ms)
±30
V
Continuous Drain Current (T
a
= 25°C)
I
D
3.0
A
Pulsed Drain Current
(t
P
≤10
µs)
I
DM
9.0
A
Single Pulsed Avalanche Energy (Note 2)
E
AS
74
mJ
SOT-223
0.83
Power Dissipation (T
a
= 25°C) (Note 3)
W
TO-252
1.136
P
D
SOT-223
14
mW/°C
Derate above 25°C
TO-252
20
Junction Temperature
175
°C
T
J
Strong Temperature
T
STG
-55 ~ +175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. T
J
= 25°C ,V
DD
= 25V, V
GS
= 10V, I
L
= 7.0A, L = 3.0mH, V
DS
= 60V
3. When surface mounted to an FR4 board using 1″pad size, 1 oz.(Cu. Area 1.127 sq in ).
THERMAL DATA
RATINGS
SOT-223
150
θ
JA
Junction to Ambient (Note)
TO-252
110
Note: When surface mounted to an FR4 board using 1″pad size, 1 oz.(Cu. Area 1.127 sq in ).
PARAMETER
SYMBOL
UNIT
°C/W
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ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain Source Breakdown Voltage (Note 1)
V
GS
= 0V, I
D
=250µA
60
BV
DSS
Temperature Coefficient (Positive)
Drain-Source Leakage Current
I
DSS
V
GS
=0V, V
DS
=60V
Gate-Source Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
=0V
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=250µA
2.0
V
GS(TH)
Temperature Coefficient (Negative)
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10 V, I
D
=1.5A
Static Drain-to-Source On-Resistance
V
DS(ON)
V
GS
=10 V, I
D
=3A
Forward Tran conductance
g
FS
V
DS
=8.0V, I
D
=1.7A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0 V, V
DS
=25 V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
(Note 2)
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
GS
=10V, V
DD
=30V, I
D
=3.0A ,
Turn-OFF Delay Time
t
D(OFF)
R
G
=9.1Ω (Note 1)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=48V, I
D
=3.0A
Gate-Source Charge
Q
GS
(Note 1)
Gate-Drain Charge
Q
GD
Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=3.0A
t
RR
Body Diode Reverse Recovery Time
t
A
V
GS
=0V, I
S
=3.0A,
dI/dt=100 A/μs (Note 1)
t
B
Body Diode Reverse Recovery Charge
Q
RR
Note:
1. Pulse Test: Pulse Width
≤300
s, Duty Cycle
≤2.0%.
2. Switching characteristics are independent of operating junction temperatures.
Power MOSFET
TYP
68
66
MAX
UNIT
V
mV/°C
1.0
µA
±100
nA
V
mV/°C
110
mΩ
0.40
V
M
455
50
155
20
30
45
30
22
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
ns
ns
nC
4.0
3.0
6.6
88
0.27
3.2
324
35
110
9.4
14
21
13
10.6
1.9
4.2
0.89
30
22
8.6
0.04
1.0
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TYPICAL CHARACTERISTICS
300
250
200
150
100
50
0
Drain Current vs. Drain-Source
Breakdown Voltage
Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0
0
20
60
80
100
40
Drain-Source Breakdown Voltage, BV
DSS
(V)
0.5
1.0 1.5
2.0 2.5 3.0
Gate Threshold Voltage, V
TH
(V)
Drain Current, I
D
(A)
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Drain Current, I
D
(A)
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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