UNISONIC TECHNOLOGIES CO., LTD
UT60N03
30V, 60A N-CHANNEL LOGIC
LEVEL MOSFET
1
Power MOSFET
DESCRIPTION
This device employs advanced MOSFET technology and features
low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the
overall efficiency of DC/DC converters and allows operation to higher
switching frequencies.
TO-252
1
TO-251
FEATURES
* R
DS(ON)
= 14mΩ @V
GS
= 10V
* R
DS(ON)
= 24mΩ @V
GS
= 4.5V
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified
1
TO-220
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
UT60N03L-TA3-T
UT60N03L-TM3-T
UT60N03L-TN3-R
UT60N03L-TN3-T
Halogen Free
UT60N03G-TA3-T
UT60N03G-TM3-T
UT60N03G-TN3-R
UT60N03G-TN3-T
Package
TO-220
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Tube
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Copyright © 2011 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current (V
GS
=10V)
I
D
60
A
TO-220
60
Power Dissipation
W
TO-251/TO-252
45
P
D
TO-220
0.4
W/°C
Derate above 25°C
TO-251/TO-252
0.37
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-251/TO-252
TO-220
Junction to Case
TO-251/TO-252
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
100
2.5
2.73
UNIT
°C/W
°C/W
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ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Time
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Turn-ON Time
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
5V
10V
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
(ON)
t
D(ON)
t
R
t
(OFF)
t
D(OFF)
t
F
t
(ON)
t
D(ON)
t
R
t
(OFF)
t
D(OFF)
t
F
Q
G
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
V
DS
=25V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=19A
Power MOSFET
MIN TYP MAX UNIT
30
1
±100
1
14
24
900
210
90
90
3
23
30
V
µA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
V
DS
=15V, V
GS
=0V, f=1MHz
V
DD
=15V, I
D
=7.9A, R
L
=18Ω, V
GS
=4.5V
11
49
83
27
28
48
6
26
120
52
28
18
9.6
1.0
3.4
3.4
V
DD
=15V, I
D
=7.9A, R
L
=18Ω, V
GS
=10V
Threshold Gate Charge
Q
G(TH)
Gate-Source Charge
Q
GS
V
DD
=15V, I
D
=19A I
G
=1.0mA
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
I
SD
=19A
Drain-Source Diode Forward Voltage
V
SD
I
SD
=10A
Reverse Recovery Time
t
rr
I
SD
=9A, dI
S
/dt =100A/s,
Reverse Recovery Charge
Q
RR
V
GS
=0V~5V,V
DD
=15V,I
D
=19A I
G
=1.0mA
V
GS
=0V~10V,V
DD
=15V,I
D
=19A,I
G
=1.0mA
V
GS
=0V~1V,V
DD
=15V,I
D
=19A I
G
=1.0mA
28
14
1.5
1.25
1.0
58
70
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TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
12
10
8
6
4
2
0
0
400
600
200
800
Source to Drain Voltage,V
SD
(mV)
V
GS
10%
t
D(ON)
t
THL
Power MOSFET
Switching Time Waveforms
V
DS
90%
t
D(OFF)
t
TLH
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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