UNISONIC TECHNOLOGIES CO., LTD
UT4414
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UTC
UT4414
is an N-channel enhancement mode FET with
excellent trench technology to provide customers perfect R
DS(ON)
and
low gate charge. The source leads are separated to allow a Kelvin
connection to the source, which may be used to bypass the source
inductance.
This device can be applied in a load switch or in PWM
applications.
SOP-8
FEATURES
* V
DSS
= 30V
* I
D
=8.5A @V
GS
=10V
* R
DS(ON)
<26mΩ @V
GS
=10V
* R
DS(ON)
<40mΩ @V
GS
=4.5V
SYMBOL
Drain
Gate
Source
ORDERING INFORMATION
Ordering Number
UT4414G-S08-R
Package
SOP-8
Packing
Tape Reel
UT4414G-S08-R
(1) Packing Type
(2) Package Type
(3) Halogen Free
(1) R: Tape Reel
(2) S08: SOP-8
(3) G: Halogen Free
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Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R502-378.a
UT4414
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Preliminary
SYMBOL
V
DSS
V
GSS
I
D
I
D
I
DM
Power MOSFET
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
UNIT
30
V
±20
V
T
A
=25°C
8.5
A
Continuous Drain Current (Note 1)
7.1
A
T
A
=70°C
Pulsed Drain Current (Note 1)
50
A
T
A
=25°C
3
W
P
D
Total Power Dissipation
T
A
=70°C
2.1
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 1)
t
≤10s
Steady-State
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
SYMBOL
θ
JA
MIN
TYP
31
59
MIN
30
0.004
1
100
3
26
40
MAX
40
75
TYP
UNIT
°C/W
°C/W
MAX UNIT
V
µA
nA
V
A
mΩ
mΩ
S
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Drain-Source On-State Resistance
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
V
DS
=24V,V
GS
=0V
V
DS
=0V ,V
GS
=±20V
V
DS
= V
GS
, I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V,I
D
=8.5A
V
GS
=4.5V, I
D
=5A
V
DS
=5V, I
D
=5A
1
20
1.9
20
31
17
Forward Transconductance
g
FS
10
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
680
820
pF
V
DS
=15V,V
GS
=0V,f =1MHz
Output Capacitance
C
OSS
102
pF
Reverse Transfer Capacitance
C
RSS
77
pF
Gate Resistance
R
G
V
DS
=0V,V
GS
=0V,f =1MHz
3
3.6
Ω
SWITCHING PARAMETERS
Total Gate Charge (10V)
Q
G
13.84 17
nC
Total Gate Charge (4.5V)
Q
G
6.74
8.1
nC
V
DS
=15V, V
GS
=10V, I
D
=8.5A
Gate-Source Charge
Q
GS
1.84
nC
Gate-Drain Charge
Q
GD
3.32
nC
Turn-ON Delay Time
t
D(ON)
4.5
6.5
ns
Turn-ON Rise Time
t
R
4.2
6.3
ns
V
DS
=15V,V
GS
=10V,R
G
=3Ω,
R
L
=1.8Ω
Turn-OFF Delay Time
t
D(OFF)
20.1
30
ns
Turn-OFF Fall Time
t
F
4.9
7.5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
4.3
A
Drain-Source Diode Forward Voltage
V
SD
I
S
=1A, V
GS
=0V
0.76
1
V
Body Diode Reverse Recovery Time
t
RR
I
F
=8.5A, dI/dt=100A/μs
17.2
21
ns
Body Diode Reverse Recovery Charge
Q
RR
I
F
=8.5A, dI/dt=100A/μs
8.6
10
nC
2
Note: 1. The value of
θ
JA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°C. The value in any given application depends on the user's specific boar design.
The current rating is based on the t
≤
10s thermal resistance rating.
2. Repetitive Rating : Pulse width limited by T
J
3. The
θ
JA
is the sum of the thermal impedance from junction to lead
θ
JL
and lead to ambient.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-378.a
UT4414
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-378.a
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