512K x 8 bit NAND Flash Memory
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| Parts packaging code | TSOP2 |
| package instruction | TSOP2, TSOP40/44,.46,32 |
| Contacts | 44 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum access time | 50 ns |
| Other features | 100K PROGRAM/ERASE CYCLES; BLOCK ERASE |
| command user interface | YES |
| Data polling | NO |
| JESD-30 code | R-PDSO-G40 |
| JESD-609 code | e0 |
| length | 18.41 mm |
| memory density | 4194304 bi |
| Memory IC Type | FLASH |
| memory width | 8 |
| Number of functions | 1 |
| Number of departments/size | 128 |
| Number of terminals | 40 |
| word count | 524288 words |
| character code | 512000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 512KX8 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TSOP2 |
| Encapsulate equivalent code | TSOP40/44,.46,32 |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE, THIN PROFILE |
| page size | 32 words |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 3.3/5 V |
| Programming voltage | 3 V |
| Certification status | Not Qualified |
| ready/busy | YES |
| Maximum seat height | 1.2 mm |
| Department size | 4K |
| Maximum standby current | 0.00005 A |
| Maximum slew rate | 0.02 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 3 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal pitch | 0.8 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| switch bit | NO |
| width | 10.16 mm |
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