Single N-channel MOSFET
ELM13404CA-S
■General description
ELM13404CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
Vds=30V
Id=5.8A (Vgs=10V)
Rds(on) < 28mΩ (Vgs=10V)
Rds(on) < 43mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
30
±
20
5.8
4.9
20
1.4
1.0
-55 to 150
Unit
V
V
A
A
W
°C
1
2
Note
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
Steady-state
Steady-state
Symbol
Rθja
Rθjl
Typ.
65
85
43
Max.
90
125
60
Unit
°C/W
°C/W
°C/W
Note
1
3
■Pin configuration
SOT-23(TOP VIEW)
3
■Circuit
D
Pin No.
1
2
3
Pin name
GATE
SOURCE
DRAIN
G
S
1
2
4- 1
Single N-channel MOSFET
ELM13404CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current 2
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Total gate charge (4.5V)
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
Symbol
Condition
Min.
30
Typ.
Ta=25°C
Max. Unit
V
1
5
100
μA
nA
V
A
mΩ
mΩ
S
V
A
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
BVdss Id=250μA, Vgs=0V
Idss
Igss
Vds=30V, Vgs=0V
Vds=0V, Vgs=
±
20V
Tj=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Rds(on)
Gfs
Vsd
Is
Is
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Vgs=10V, Vds=15V, Id=5.8A
Vgs=10V, Id=5.8A
Vgs=4.5V, Id=5A
Vds=5V, Id=5.8A
Is=1A
Tj=125°C
1.0
20
1.9
22.5
31.3
3.0
28.0
38.0
43.0
1.00
2.5
20.0
10.0
34.5
14.5
0.76
Vgs=0V, Vds=15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
1.5
680
102
77
3.0
13.88
6.78
1.80
3.12
4.6
3.8
20.9
5.0
16.1
7.4
820
108
3.6
17.00
8.10
Qgd
td(on)
tr
Vgs=10V, Vds=15V
td(off) Rl=2.7Ω, Rgen=3Ω
tf
trr
If=5.8A, dl/dt=100A/μs
Qrr If=5.8A, dl/dt=100A/μs
6.5
5.7
30.0
7.5
21.0
10.0
4- 2
AO3404
Single N-channel MOSFET
ELM13404CA-S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
■Typical electrical and thermal characteristics
30
25
20
20
16
Vds=5V
10V
6V
5V
4.5V
4V
Id (A)
15
10
5
0
0
1
2
3.5V
Vgs=3V
Id (A)
12
8
4
0
125°C
25°C
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Vds (Volts)
Fig 1: On-Region Characteristics
Vgs (Volts)
Figure 2: Transfer Characteristics
60
50
1.6
Normalized On-Resistance
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0
Id=5A
Vgs=10V
Rds(on) (m
½
)
40
30
20
10
0
5
Vgs=4.5V
Vgs=4.5V
Vgs=10V
10
15
20
Id (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
70
60
1.0E+01
Id=5A
Is Amps
1.0E+00
1.0E-01
1.0E-02
1.0E-03
Rds(on) (m
½
)
50
40
30
20
10
2
4
6
8
10
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
125°C
25°C
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body diode characteristics
4- 3
Alpha & Omega Semiconductor, Ltd.
www.aosmd.co
AO3404
Single N-channel MOSFET
ELM13404CA-S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
Vds=15V
Id=5.8A
1000
900
800
f=1MHz
Vgs=0V
Capacitance (pF)
700
600
500
400
300
200
100
0
0
C
rss
C
oss
Vgs (Volts)
6
4
2
0
0
2
4
6
8
10
12
14
Q
g
(nC)
Figure 7: Gate-Charge characteristics
C
iss
5
10
15
20
25
30
Vds (Volts)
Figure 8: Capacitance Characteristics
100
Rds(on)
limited
Tj(max)=150°C
Ta=25°C
1ms
10ms
100½s
10½s
40
30
Tj(max)=150°C
Ta=25°C
Id (Amps)
10
Power W
DC
0.1s
1
20
1s
10s
10
0.1
0.1
1
Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
½
ja
Normalized Transient
Thermal Resistance
D=Ton/T
T
j,pk
=T
a
+P
dm
.Z
½ja
.R
½ja
R
½ja
=90°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Ton
T
100
1000
1
10
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
4- 4
www.aosmd.com
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