PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1805 – 1880 MHz
Description
The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier
applications in the 1805 to 1880 MHz frequency band. Features
include input and output matching, high gain, wide signal bandwidth
and reduced memory effects for improved DPD correctability.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFB182503EL
H-33288-6, eared
PTFB182503FL
H-34288-6, earless
Features
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 1842 MHz, 3GPP WCDMA
signal, PAR = 7.5 dB, 10 MHz carrier spacing
-30
35
30
25
•
•
•
Broadband internal input and output matching
Enhanced for use in DPD error correction systems
Typical two-carrier WCDMA performance, 30 V,
1880 Mhz
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
- Intermodulation distortion = –35 dBc
Typical CW performance, 1880 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 55%
Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
Integrated ESD protection. Human Body Model,
Class 2 (minimum)
Capable of handling 5:1 VSWR @ 30 V, 240 W
(CW) output power
Pb-free, RoHS-compliant
IM3 (dBc), ACPR (dBc)
-40
-45
-50
-55
38
40
IM3
ACPR
Drain Efficiency (%)
-35
Efficiency
20
15
10
5
•
•
42
44
46
48
50
•
•
•
Average Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Specifications
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 50 W average
ƒ
1
= 1840 MHz, ƒ
2
= 1845 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 7.5
dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
18
27
—
Typ
19
28
–35
Max
—
—
–31
Unit
dB
%
dBc
η
D
IMD
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 04, 2009-09-14
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Specifications
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 220 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
18
40
–28
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1.85 A
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.03
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 50 W WCDMA)
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
65
–6 to +10
200
–40 to +150
0.262
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB182503EL V1
Package Type
H-33288-6
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Thermally-enhanced earless flange, single-ended
Shipping
Tray
Tape & Reel, 250 pcs
Tray
Tape & Reel, 250 pcs
PTFB182503EL V1 R250 H-33288-6
PTFB182503FL V1
H-34288-6
PTFB182503FL V1 R250 H-34288-6
*See Infineon distributor for future availability.
Data Sheet
2 of 13
Rev. 04, 2009-09-14
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Two-Carrier WCDMA at Various Biases
V
DD
= 30 V, ƒ = 1842 MHz, 3GPP WCDMA signal,
P/AR = 7.5 dB, 5 MHz carrier spacing
-30
I
DQ
= 1.65 A
-35
I
DQ
= 1.45 A
Six-Carrier GSM vs Power Out
V
DD
= 30V, I
DQ
=1.85 A ƒ = 1842 MHz, PAR = 7.1 dB
-5
-10
-15
IM3 Up
IM3 Low
Efficiency
Efficiency
45
40
35
30
25
20
15
10
5
37
39
41
43
45
47
49
51
3rd Order IMD (dBc)
IMD (dBc)
I
DQ
= 2.05 A
I
DQ
= 1.85 A
42
44
46
48
50
-40
-45
-50
-55
38
I
DQ
= 2.25 A
-20
-25
-30
-35
-40
-45
40
Average Output Power (dBm)
Output Power (dBm)
CW Performance
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 1842 MHz
20
19
18
70
60
20.0
19.5
Power Sweep
V
DD
= 30 V, ƒ = 1842 MHz
Power Gain (dB)
50
40
30
20
Drain Efficiency (%)
Gain
19.0
18.5
18.0
17.5
17.0
36
38
40
42
44
46
48
50
52
54
1.45 A
1.65 A
1.85 A
2.05 A
2.25 A
Gain (dB)
17
16
15
14
13
35
40
45
50
55
Efficiency
10
0
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 13
Rev. 04, 2009-09-14
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 1850 mA, ƒ = 1842 MHz
19
18
17
16
15
14
0
40
80
120
160
200
240
65
Voltage Sweep
I
DQ
= 1850 mA, ƒ = 1842 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
-10
50
Gain
Drain Efficiency (%)
55
45
35
Efficiency
3rd Order IMD (dBc)
-20
40
-30
IM3 Up
30
Efficiency
T
CASE
= 25°C
T
CASE
= 90°C
25
15
-40
20
Gain
-50
23
25
27
29
31
33
10
Output Power (W)
Supply Voltage (V)
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
Normalized Bias Voltage
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
20
40
60
80
0.60 A
2.30 A
4.00 A
5.70 A
7.40 A
9.10 A
100
Case Temperature (°C)
Data Sheet
4 of 13
Rev. 04, 2009-09-14
Gain (dB), Drain Efficiency (%)
Gain (dB)
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
RD
G
ENE
RA
Z
0
= 50
Ω
D
Z Source
Z Load
S T
OW
A
G
S
-
W
AV
E
LE
NGTH
Z Load
0.0
ARD
L
OA
D
-
HS
T
OW
E
NGT
VEL
0.1
Frequency
MHz
1780
1800
1820
1840
1860
1880
1900
1920
R
Z Source
Ω
jX
–2.48
–2.30
–2.13
–1.96
–1.76
–1.58
–1.39
–1.21
2.99
2.95
2.89
2.84
2.80
2.78
2.74
2.72
Z Load
Ω
R
1.33
1.33
1.31
1.29
1.29
1.28
1.29
1.29
jX
–0.49
–0.38
–0.27
–0.16
–0.02
0.10
0.23
0.36
1780 MHz
Z Source
0. 1
WA
<---
0.
2
See next page for circuit information
Data Sheet
5 of 13
Rev. 04, 2009-09-14
0.2
0.1
1920 MHz
DSP and ARM Processors
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