S30D10B0F datasheet, PDF - EEWORLD Datasheet

S30D10B0F: DescriptionSilicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN; CategoryAnalog mixed-signal IC Trigger device; File Size66KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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S30D10B0F Overview

Silicon Controlled Rectifier, 550A I(T)RMS, 275000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-118
package instruction	POST/STUD MOUNT, O-MUPM-H3
Contacts	3
Reach Compliance Code	compliant
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	2.5 V
JEDEC-95 code	TO-209AE
JESD-30 code	O-MUPM-H3
JESD-609 code	e0
On-state non-repetitive peak current	10500 A
Number of components	1
Number of terminals	3
Maximum on-state current	275000 A
Maximum operating temperature	125 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	550 A
Off-state repetitive peak voltage	1000 V
Repeated peak reverse voltage	1000 V
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	HIGH CURRENT CABLE
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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