K4T1G084QD-ZLF7 datasheet, PDF

K4T1G084QD-ZLF7: DescriptionDDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60; Categorystorage storage; File Size589KB，27 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4T1G084QD-ZLF7 Overview

DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
package instruction	FBGA, BGA60,9X11,32
Reach Compliance Code	unknown
Maximum access time	0.4 ns
Maximum clock frequency (fCLK)	400 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e3
memory density	1073741824 bit
Memory IC Type	DDR DRAM
memory width	8
Humidity sensitivity level	1
Number of terminals	60
word count	134217728 words
character code	128000000
organize	128MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA60,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Celsius)	225
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	4,8
Maximum slew rate	0.26 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Terminal surface	MATTE TIN
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED

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