K4T1G044QQ-HCE7T datasheet, PDF

K4T1G044QQ-HCE7T: DescriptionDDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60; Categorystorage storage; File Size980KB，45 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4T1G044QQ-HCE7T Overview

DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
package instruction	FBGA, BGA60,9X11,32
Reach Compliance Code	unknown
Maximum access time	0.4 ns
Maximum clock frequency (fCLK)	400 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B60
memory density	1073741824 bit
Memory IC Type	DDR DRAM
memory width	4
Number of terminals	60
word count	268435456 words
character code	256000000
organize	256MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA60,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	4,8
Maximum slew rate	0.245 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

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