TPC6106
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
TPC6106
Notebook PC Applications
Portable Equipment Applications
•
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 58 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 5.5 S (typ.)
Low leakage current: I
DSS
=
−10
µA (max) (V
DS
=
−40
V)
Enhancement model: V
th
=
−0.8
to
−2.0
V
(V
DS
=
−10
V, I
D
=
−1
mA)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
(t
=
5 s)
(Note 2a)
(t
=
5 s)
(Note 2b)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
(Note 4)
E
AR
T
ch
T
stg
Rating
−40
−40
±20
−3.9
−15.6
2.2
0.7
1.7
−1.9
0.22
150
−55~150
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-3T1A
Drain power dissipation
Drain power dissipation
Weight: 0.011 g (typ.)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Circuit Configuration
6
5
4
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient (t
=
5 s)
(Note 2a)
Thermal resistance, channel to ambient (t
=
5 s)
(Note 2b)
Symbol
R
th (ch-a)
R
th (ch-a)
Max
56.8
178.5
Unit
1
°C/W
°C/W
2
3
Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-13
TPC6106
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
t
f
t
off
Q
g
Q
gs
Q
gd
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
(BR) DSX
V
th
R
DS (ON)
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
I
D
= −1.9
A
V
OUT
R
L
=
10.5
Ω
4.7
Ω
V
DS
= −10
V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±16
V, V
DS
=
0 V
V
DS
= −40
V, V
GS
=
0 V
I
D
= −10
mA, V
GS
=
0 V
I
D
= −10
mA, V
GS
=
20 V
V
DS
= −10
V, I
D
= −1
mA
V
GS
= −4.5
V, I
D
= −1.9
A
V
GS
= −10
V, I
D
= −1.9
A
V
DS
= −10
V, I
D
= −1.9
A
Min
⎯
⎯
−40
−25
−0.85
⎯
⎯
2.7
⎯
⎯
⎯
⎯
V
GS
−10
V
0V
⎯
⎯
⎯
⎯
V
DD
∼
−32
V, V
GS
= −10
V,
−
I
D
= −3.9
A
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
90
58
5.5
460
85
140
7
11
33
86
12
9
3
Max
±10
−10
⎯
⎯
−2.0
120
75
⎯
⎯
⎯
⎯
⎯
⎯
ns
⎯
⎯
⎯
⎯
⎯
nC
pF
Unit
µA
µA
V
V
mΩ
S
Duty
<
1%, t
w
=
10
µs
=
V
DD
∼
−20
V
−
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Drain reverse
current
Pulse (Note 1)
Symbol
I
DRP
V
DSF
Test Condition
—
I
DR
= −3.9
A, V
GS
=
0 V
Min
—
—
Typ.
—
—
Max
−15.6
1.2
Unit
A
V
Forward voltage (diode)
2
2004-07-13
TPC6106
Marking
(Note 5)
Lot code (month)
Lot No.
Part No.
(or abbreviation code)
S3F
Product-specific code
Lot code
(year)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Pin #1
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t
=
5 s)
(b) Device mounted on a glass-epoxy board (b) (t
=
5 s)
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
(a)
(b)
Note 3: V
DD
= −24
V, T
ch
=
25°C (initial), L
=
0.5 mH, R
G
=
25
Ω,
I
AR
= −1.9
A
Note 4: Repetitive rating pulse width limited by maximum channel temperature
Note 5:
•
on the lower left of the marking indicates Pin 1.
3
2004-07-13
TPC6106
I
D
– V
DS
−5
Common source
Ta
=
25°C
Pulse test
−10
−6
−4.5
−4
−3.5
−10
−10
−6
I
D
– V
DS
−4.5
−4
−3.5
Drain current I
D
(A)
Drain current I
D
(A)
−4
−8
−3
−6
−2.8
−4
−2.6
VGS
= −2.4
V
Common source
Ta
=
25°C
Pulse test
−1
−2
−3
−4
−5
−3
−3
−2.8
−2.6
−2
−1
VGS
= −2.4
V
−2
0
0
−0.1
−0.2
−0.3
−0.4
−0.5
0
0
Drain-source voltage V
DS
(V)
Drain-source voltage V
DS
(V)
I
D
– V
GS
−12
V
DS
– V
GS
−0.8
Drain-source voltage V
DS
(V)
Common source
VDS
= −10
V
Pulse test
Ta
= −55°C
Common source
Ta
=
25°C
Pulse test
−0.6
Drain current I
D
(A)
25°C
−8
100°C
−0.4
−1.9
A
−0.2
−1
A
ID
= −3.9
A
−4
0
0
−1
−2
−3
−4
0
0
−2
−4
−6
−8
−10
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
|Y
fs
| – I
D
(S)
100
Common source
VDS
= −10
V
Pulse test
1000
Common source
Ta
=
25°C
Pulse test
R
DS (ON)
– I
D
Forward transfer admittance |Y
fs
|
Drain-source ON resistance
R
DS (ON)
(mΩ)
Ta
= −55°C
10
100°C
25°C
−4.5
V
100
VGS
= −10
V
1
−1
−10
−100
10
−0.1
−1
−10
−100
Drain current I
D
(A)
Drain current I
D
(A)
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2004-07-13
TPC6106
R
DS (ON)
– Ta
200
−100
I
DR
– V
DS
(A)
Common source
Ta
=
25°C
Pulse test
Common source
Pulse test
Drain-source ON resistance
R
DS (ON)
(mΩ)
160
Drain reverse current I
DR
−3.9
A
−10
−5
V
−10
V
120
ID
= −1A, −
1.9A
80
VGS
= −4.5
V
ID
= −1A, −1.9A, −3.9A
40
VGS
= −10
V
0
−80
−40
−3
V
−1
−1
V
VGS
= −0
V
−0.1
0
0
40
80
120
160
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature
Ta
(
°
C)
Drain-source voltage V
DS
(V)
C – V
DS
1000
−2.0
V
th
– Ta
(V)
Ciss
Gate threshold voltage V
th
(pF)
−1.6
Capacitance C
−1.2
100
Coss
Crss
Common source
VGS
=
0 V
f
=
1 MHz
Ta
=
25°C
−1
−10
−100
−0.8
−0.4
Common source
VGS
= −10
V
ID
= −1
mA
Pulse test
−40
0
40
80
120
160
10
−0.1
0
−80
Drain-source voltage V
DS
(V)
Ambient temperature
Ta
(
°
C)
P
D
– Ta
2.5
−40
(1) t
=
5 s
2.0
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
(1) DC
1.0
(2) t
=
5 s
0.5
Dynamic input/output
characteristics
−16
(W)
(V)
Drain power dissipation P
D
Drain-source voltage V
DS
−30
VDD
= −32
V
VDS
−8
V
−16
V
VDD
= −32
V
−12
−20
−16
V
−8
V
−8
−10
VGS
0
0
(2) DC
0
0
Common source
ID
= −3.9
A
Ta
=
25°C
Pulse test
8
12
16
−4
40
80
120
160
4
0
20
Ambient temperature
Ta
(
°
C)
Total gate charge Q
g
(nC)
5
2004-07-13
Gate-source voltage
1.5
V
GS
(V)
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