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MBRF745

Description
7.5 A, 45 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size202KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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MBRF745 Overview

7.5 A, 45 V, SILICON, RECTIFIER DIODE

MBRF735-MBRF7150
Isolated 7.5AMP. Schottky Barrier Rectifiers
ITO-220AC
.185(4.7)
.173(4.4)
.124(3.16)
.118(3.00)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.272(6.9)
.248(6.3)
.112(2.85)
.100(2.55)
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
.606(15.5)
.583(14.8)
.063(1.6)
MAX
.161(4.1)
.146(3.7)
.110(2.8)
.098(2.5)
.030(0.76)
.020(0.50)
.055(1.4)
.043(1.1)
.035(0.9)
.020(0.5)
.071(1.8)
MAX
.543(13.8)
.512(13.2)
2
.100(2.55)
.100(2.55)
PIN 1
PIN 2
CASE
Case Positive
Mechanical Data
Cases: ITO-220AC molded plastic body
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
Units
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Repetitive Forward Current (Square Wave, 20KHz) at
o
Tc=105 C
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
o
I
F
=7.5A,Tc=25 C
o
I
F
=7.5A,Tc=125 C
o
I
F
=15A,Tc=25 C
o
I
F
=15A,Tc=125 C
Maximum Instantaneous Reverse Current @ Tc =25 C
o
at Rated DC Blocking Voltage (Note 1) @ Tc=125 C
Voltage Rate of Change (Rated V
R
)
Typical Junction Capacitance
Maximum Thermal Resistance, (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
Notes:
o
Maximum Ratings and Electrical Characteristics
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
I
R
dV/dt
Cj
735
35
24
35
745
45
31
45
750
50
35
50
760
60
42
60
7.5
790
90
63
90
7100
100
70
100
7150
150
105
150
V
V
V
A
A
A
15.0
150
1.0
0.57
0.84
0.72
0.75
0.65
0.5
0.92
0.82
-
-
1.02
0.92
-
-
A
V
mA
mA
V/uS
200
pF
o
0.1
15
350
0.1
10
10,000
280
7.0
-65 to +150
-65 to +175
0.1
5.0
R
θJC
T
J
T
STG
C/W
o
C
o
C
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-plate.
http://www.luguang.cn
mail:lge@luguang.cn

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Description 7.5 A, 45 V, SILICON, RECTIFIER DIODE 7.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 7.5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC 7.5 A, 35 V, SILICON, RECTIFIER DIODE 7.5 A, 50 V, SILICON, RECTIFIER DIODE 7.5 A, 60 V, SILICON, RECTIFIER DIODE 7.5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC

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