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MBR6030PT

Description
60 A, 30 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    Schottky diode   
File Size337KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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MBR6030PT Overview

60 A, 30 V, SILICON, RECTIFIER DIODE

MBR6030PT Parametric

Parameter NameAttribute value
Case StyleTO-3P
IF(A)60
Maximum recurrent peak reverse voltage40
Peak forward surge current500
Maximum instantaneous forward voltage0.62
@IF(A)30
Maximum reverse current20
TJ(℃)/
classDiodes

MBR6030PT Related Products

MBR6030PT MBR60100PT MBR6035PT MBR6040PT MBR6045PT MBR6050PT MBR6060PT MBR6080PT TO-247AD
Description 60 A, 30 V, SILICON, RECTIFIER DIODE 60 A, 100 V, SILICON, RECTIFIER DIODE 60 A, 35 V, SILICON, RECTIFIER DIODE 60 A, 40 V, SILICON, RECTIFIER DIODE 60 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD 40 A, 50 V, SILICON, RECTIFIER DIODE 60 A, 60 V, SILICON, RECTIFIER DIODE 60 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AD 60 A, 100 V, SILICON, RECTIFIER DIODE
Case Style TO-3P - - TO-3P TO-3P - TO-3P TO-3P -
IF(A) 60 - - 60 60 - 60 60 -
Maximum recurrent peak reverse voltage 40 - - 40 45 - 60 80 -
Maximum instantaneous forward voltage 0.62 - - 0.62 0.62 - 0.75 0.85 -
@IF(A) 30 - - 30 30 - 30 30 -
TJ(℃) / - - / / - / / -
class Diodes - - Diodes Diodes - Diodes Diodes -

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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