3N200
MOS FIELD-EFFECT TRANSISTOR
DESCRIPTION:
The
ASI 3N200
is an N-Channel
Dual-Gate Depletion Type Transistor
With Monolithic Gate Protection Diode,
used in RF,IF Amplifier and Mixer
Applications up to 500 MHz.
PACKAGE STYLE TO-72
MAXIMUM RATINGS
I
V
P
DISS
T
J
T
STG
O
O
50 mA
20 V
330 mW @ T
A
= 25 C
-65 C to +175 C
-65 C to +175 C
O
O
O
1 = Drain 2 = Gate #2
3 = Gate #1
4 = Source, Case, and Substrate
CHARACTERISTICS
SYMBOL
V
G1S(OFF)
V
G2S(OFF)
I
G1SSF
I
G1SSR
I
G2SSF
I
G2SSR
I
DS
V
(BR)G1
V
(BR)G2
g
fs
G
PS
C
rss
C
iss
NF
B
W
T
A
= 25 C
O
NONE
TEST CONDITIONS
V
G2S
= 4.0 V
I
D
= 50
µA
V
G1S
= 0 V
I
D
= 50
µA
V
G2S
= V
DS
= 0 V
O
T
A
= 100 C
V
G1S
= -6.0 V V
G2S
= V
DS
= 0 V
O
T
A
= 100 C
V
G2S
= 6.0 V V
G1S
= V
DS
= 0 V
O
T
A
= 100 C
V
G2S
= -6.0 V V
G1S
= V
DS
= 0 V
O
T
A
= 100 C
V
DS
= 15 V
V
G1S
= 0 V
V
G2S
= 4.0 V
I
G1
=
±
100
µA
I
G2
=
±
100
µA
V
DS
= 15 V
V
G2S
= 4.0 V
I
D
= 10 mA
f = 1.0 KHz
V
DS
= 15 V
V
G2S
= 4.0 V
I
D
= 10 mA
f = 400 MHz
V
DS
= 15 V
V
G2S
= 4.0 V
I
D
= 10 mA
f = 1.0 MHz
V
DS
= 15 V
V
DS
= 15 V
V
G1S
= 1.0 V
V
DS
= 15 V
f = 400 MHz
V
G2S
= 4.0 V
I
D
= 10 mA
MINIMUM
-0.5
-0.5
TYPICAL
MAXIMUM
-3.0
-3.0
50
5.0
50
5.0
50
5.0
50
5.0
12
13
13
20000
UNITS
V
V
µ
A
µ
A
µ
A
µ
A
mA
V
V
µ
mho
dB
0.5
±6.5
±6.5
10000
10
0.005
4.0
28
5.0
0.03
8.5
6.0
38
pF
dB
MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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