LS3N171 datasheet, PDF - EEWORLD Datasheet

LS3N171: DescriptionSmall Signal Field-Effect Transistor, 0.03A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size273KB，1 Pages; ManufacturerLinear ( ADI ); Websitehttp://www.analog.com/cn/index.html

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LS3N171 Overview

Small Signal Field-Effect Transistor, 0.03A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4

Parameter Name	Attribute value
Maker	Linear ( ADI )
Parts packaging code	TO-72
package instruction	CYLINDRICAL, O-MBCY-W4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Configuration	SINGLE
Minimum drain-source breakdown voltage	25 V
Maximum drain current (ID)	0.03 A
Maximum drain-source on-resistance	200 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	1.3 pF
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

	LS3N171
Description	Small Signal Field-Effect Transistor, 0.03A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4
Maker	Linear ( ADI )
Parts packaging code	TO-72
package instruction	CYLINDRICAL, O-MBCY-W4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Configuration	SINGLE
Minimum drain-source breakdown voltage	25 V
Maximum drain current (ID)	0.03 A
Maximum drain-source on-resistance	200 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	1.3 pF
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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