JMnic
Product Specification
Silicon PNP Power Transistors
2SB817
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SD1047
APPLICATIONS
・140V/12A
AF 60W output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-140
-6
-12
-15
100
150
-40~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-50mA ;I
B
=0
I
C
=-5mA ;I
E
=0
I
E
=-5mA ;I
C
=0
I
C
=-5A ;I
B
=-0.5A
I
C
=-1A;V
CE
=-5V
V
CB
=-80V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-6A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
E
=0;f=1MHz;V
CB
=10V
60
20
15
300
MIN
-140
-160
-6
-1.1
TYP.
2SB817
MAX
UNIT
V
V
V
V
-1.5
-0.1
-0.1
200
V
mA
mA
MHz
pF
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-1.0A I
B1
=-I
B2
=-0.1A
0.25
1.61
0.53
μs
μs
μs
h
FE-1
Classifications
D
60-120
E
100-200
2