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CM150E3Y-12E

Description
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size157KB,1 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

CM150E3Y-12E Overview

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel

CM150E3Y-12E Parametric

Parameter NameAttribute value
MakerMitsubishi
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)150 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Number of components1
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)950 ns
Nominal on time (ton)1100 ns
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