SNF40709 datasheet, PDF - EEWORLD Datasheet

SNF40709: DescriptionPower Field-Effect Transistor, 10.5A I(D), 700V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size30KB，1 Pages; ManufacturerSilicon Transistor Corp.oration

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SNF40709 Overview

Power Field-Effect Transistor, 10.5A I(D), 700V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Silicon Transistor Corp.oration
Parts packaging code	TO-258AA
package instruction	FLANGE MOUNT, R-MSFM-P3
Contacts	3
Reach Compliance Code	unknown
Configuration	SINGLE
Minimum drain-source breakdown voltage	700 V
Maximum drain current (Abs) (ID)	10.5 A
Maximum drain current (ID)	10.5 A
Maximum drain-source on-resistance	0.9 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-258AA
JESD-30 code	R-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	250 W
Maximum power dissipation(Abs)	250 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
Transistor component materials	SILICON

	SNF40709	SNF40708
Description	Power Field-Effect Transistor, 10.5A I(D), 700V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN	Power Field-Effect Transistor, 11.5A I(D), 700V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN
Is it Rohs certified?	incompatible	incompatible
Maker	Silicon Transistor Corp.oration	Silicon Transistor Corp.oration
Parts packaging code	TO-258AA	TO-258AA
package instruction	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3
Contacts	3	3
Reach Compliance Code	unknown	unknown
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	700 V	700 V
Maximum drain current (Abs) (ID)	10.5 A	11.5 A
Maximum drain current (ID)	10.5 A	11.5 A
Maximum drain-source on-resistance	0.9 Ω	0.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-258AA	TO-258AA
JESD-30 code	R-MSFM-P3	R-MSFM-P3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	250 W	250 W
Maximum power dissipation(Abs)	250 W	250 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON

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