OSC-0.3CP datasheet, PDF - EEWORLD Datasheet

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OSC-0.3CP: DescriptionTransistor,; CategoryDiscrete semiconductor The transistor; File Size14KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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OSC-0.3CP Overview

Transistor,

OSC-0.3CP Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.225 A
Configuration	Single
Minimum DC current gain (hFE)	20
Maximum operating temperature	200 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	5 W

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OSC-0.3CP

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION:

The

OSC-0.3CP

is a High Frequency

Transistor designed for C Band

Oscillator Applications.

PACKAGE STYLE .138 2L PILL

0.095

0.105

0.023

0.027

FEATURES:

•

OUT

= 320 mW Typ. at 7.5 GHz

•

Gold Metalization

•

Hermetic Ceramic Package

0.095

0.105

MAXIMUM RATINGS

DISS

STG

225 mA

Collector

25 V

5.0 W @ T

= 25

-65

C to +200

-65

C to +200

30 C/W

0.030

0.035

ASI ORDER CODE: ASI10819

CHARACTERISTICS

SYMBOL

CEO

CBO

EBO

CBO



S21C



OSC

= 1.0 mA

= 100

µA

= 1.0 V

= 15 V

= 8.0 V

= 10 V

= 8 V

= 12 V

= 25

TEST CONDITIONS

MINIMUM

TYPICAL

MAXIMUM

UNITS

---

2.0

500

= 100 mA

f = 1.0 MHz

= 100 mA

= 120 mA

f = 1.0 GHz

f = 7.5 GHz

4.0

320

200

1.5

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1202

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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