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AFS1500-FG676Y

Description
Field Programmable Gate Array,
CategoryProgrammable logic devices    Programmable logic   
File Size18MB,334 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

AFS1500-FG676Y Overview

Field Programmable Gate Array,

AFS1500-FG676Y Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionFPBGA-256
Reach Compliance Codecompliant
JESD-609 codee0
Humidity sensitivity level3
Peak Reflow Temperature (Celsius)225
Programmable logic typeFIELD PROGRAMMABLE GATE ARRAY
Terminal surfaceTin/Lead (Sn/Pb)
Maximum time at peak reflow temperature20
Revision 4
Fusion Family of Mixed Signal FPGAs
Features and Benefits
High-Performance Reprogrammable Flash Technology
Advanced 130-nm, 7-Layer Metal, Flash-Based CMOS Process
Nonvolatile, Retains Program when Powered Off
Instant On Single-Chip Solution
350 MHz System Performance
In-System Programming (ISP) and Security
• ISP with 128-Bit AES via JTAG
• FlashLock
®
Designed to Protect FPGA Contents
Advanced Digital I/O
• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Bank-Selectable I/O Voltages – Up to 5 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS
3.3 V / 2.5 V /1.8 V / 1.5 V, 3.3 V PCI / 3.3 V PCI-X, and
LVCMOS 2.5 V / 5.0 V Input
• Differential I/O Standards: LVPECL, LVDS, B-LVDS, M-LVDS
– Built-In I/O Registers
– 700 Mbps DDR Operation
• Hot-Swappable I/Os
• Programmable Output Slew Rate, Drive Strength, and Weak
Pull-Up/Down Resistor
• Pin-Compatible Packages across the Fusion
®
Family
Embedded Flash Memory
• User Flash Memory – 2 Mbits to 8 Mbits
– Configurable 8-, 16-, or 32-Bit Datapath
– 10 ns Access in Read-Ahead Mode
• 1 Kbit of Additional FlashROM
Integrated A/D Converter (ADC) and Analog I/O
Up to 12-Bit Resolution and up to 600 Ksps
Internal 2.56 V or External Reference Voltage
ADC: Up to 30 Scalable Analog Input Channels
High-Voltage Input Tolerance: –10.5 V to +12 V
Current Monitor and Temperature Monitor Blocks
Up to 10 MOSFET Gate Driver Outputs
– P- and N-Channel Power MOSFET Support
– Programmable 1, 3, 10, 30 µA, and 20 mA Drive Strengths
• ADC Accuracy is Better than 1%
SRAMs and FIFOs
• Variable-Aspect-Ratio 4,608-Bit SRAM Blocks (×1, ×2, ×4, ×9,
and ×18 organizations available)
• True Dual-Port SRAM (except ×18)
• Programmable Embedded FIFO Control Logic
On-Chip Clocking Support
Internal 100 MHz RC Oscillator (accurate to 1%)
Crystal Oscillator Support (32 KHz to 20 MHz)
Programmable Real-Time Counter (RTC)
6 Clock Conditioning Circuits (CCCs) with 1 or 2 Integrated PLLs
– Phase Shift, Multiply/Divide, and Delay Capabilities
– Frequency: Input 1.5–350 MHz, Output 0.75–350 MHz
Soft ARM Cortex-M1 Fusion Devices (M1)
• ARM
®
Cortex-™M1–Enabled
Pigeon Point ATCA IP Support (P1)
• Targeted to Pigeon Point
®
Board Management Reference
(BMR) Starter Kits
• Designed in Partnership with Pigeon Point Systems
• ARM Cortex-M1 Enabled
• Targeted to Advanced Mezzanine Card (AdvancedMC™ Designs)
• Designed in Partnership with MicroBlade
• 8051-Based Module Management Controller (MMC)
Low Power Consumption
• Single 3.3 V Power Supply with On-Chip 1.5 V Regulator
• Sleep and Standby Low-Power Modes
MicroBlade Advanced Mezzanine Card Support (U1)
Table 1 • Fusion Family
Fusion Devices
ARM Cortex-M1
*
Devices
Pigeon Point Devices
MicroBlade Devices
System Gates
General
Information
Tiles (D-flip-flops)
Secure (AES) ISP
PLLs
Globals
Flash Memory Blocks (2 Mbits)
Total Flash Memory Bits
Memory
FlashROM Bits
RAM Blocks (4,608 bits)
RAM kbits
Analog Quads
Analog Input Channels
Analog and I/Os
Gate Driver Outputs
I/O Banks (+ JTAG)
Maximum Digital I/Os
Analog I/Os
90,000
2,304
Yes
1
18
1
2M
1,024
6
27
5
15
5
4
75
20
U1AFS250
250,000
6,144
Yes
1
18
1
2M
1,024
8
36
6
18
6
4
114
24
AFS090
AFS250
M1AFS250
AFS600
M1AFS600
P1AFS600
U1AFS600
600,000
13,824
Yes
2
18
2
4M
1,024
24
108
10
30
10
5
172
40
AFS1500
M1AFS1500
P1AFS1500
U1AFS1500
1,500,000
38,400
Yes
2
18
4
8M
1,024
60
270
10
30
10
5
252
40
Note:
*Refer to the
Cortex-M1
product brief for more information.
January 2013
© 2013 Microsemi Corporation
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