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2SC4516H

Description
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size176KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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2SC4516H Overview

RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, NPN

2SC4516H Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.08 A
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)8000 MHz
Base Number Matches1
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